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                        Full list of papers

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LEDs (8)

N. V. Zotova, S. A. Karandeshev, B. A. Matveev, M. A. Remennyĭ, and N.M. Stus’, “Radiation distribution of 3.4-µm immersion LEDs in the far field” , Journal of Optical Technology, Vol. 79, Issue 9, pp. 571-575 (2012)
http://dx.doi.org/10.1364/JOT.79.000571

Parthiban Santhanam, Duanni Huang, Rajeev J. Ram, Maxim A. Remennyi, and Boris A. Matveev, “Room Temperature Thermo-Electric Pumping in mid-Infrared Light-Emitting Diodes”, Appl. Phys. Lett. 103 (19), 183513 (1 November 2013); doi: 10.1063/1.4828566

B. Matveev,  “LEDs Based On Heterostructures À3Â5 In Gas Analysis Instrument Engineering".   Photonics, #6 (December 2014).

Il`inskaya N.D.; Karandashev S.A.; Karpukhina N.G.; Lavrov A.A.; Matveev B.A.; Remennyi M.A.; Stus N.M.; Usikova A.A., " The 3x3 matrix based on p-InAsSbP/n-InAs single heterostructure diodes", Applied Physics, issue 6, 2014, Pages 47-51

B. Matveev, “Surprises of Medium-Wave IR LEDs Based on À3Â5 Heterostructures”, Photonics, v.2 (50) pp.: 62-69  (2015)

S. A. Karandashev, B. A. Matveev, and M. A. Remennyi, «Indium Arsenide-Based Spontaneous Emission Sources (Review: a Decade Later)», Semiconductors, 2019, Vol. 53, No. 2, pp. 139–149.

N. Dyakonova, S. A. Karandashev, M. E. Levinshtein, B. A. Matveev , M. A. Remennyi,  «Low frequency noise in p-InAsSbP/n-InAs/n-InAsSbP and p-InAsSbP/n-InAsSbP mid-IR light emitting diodes», Infrared Physics and Technology, Volume 125, September 2022, 104301
 

A.L. Zakgeim, S.A. Karandashev, A.A. Klimov, R.E. Kunkov, T.S. Lukhmyrina, B.A. Matveev, M.A. Remennyi, A.A. Usikova, A.E. Chernyakov, “On heating mechanisms in LEDs based on p-InAsSbP/n-InAs(Sb)”, Semiconductors, 2023, Vol. 57, No. 1, pp.39-48

DOI: 10.21883/SC.2023.01.55619.4338

https://doi.org/10.21883/SC.2023.01.55619.4338

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Negative Luminescence devices (1)

S. A. Karandashev, A.A. Lavrov, T. S. Lukhmyrina, B. A. Matveev, M. A. Remennyi

"Self-cooling in reverse biased p-InAsSbP/n-InAs0.9Sb0.1 heterostructure" (in press)

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Photodiodes (28)

N. D. Il’inskaya, S. A. Karandashev, N. M. Latnikova, A. A. Lavrov, B. A. Matveev, A. S. Petrov, M. A. Remennyi, E. N. Sevost’yanov, and N. M. Stus’, “Cooled Photodiodes Based on a Type-II Single p-InAsSbP/n-InAs Heterostructure “ISSN 1063_7850, Technical Physics Letters, 2013, Vol. 39, No. 9, pp. 818–821. © Pleiades Publishing, Ltd., 2013. Original Russian Text © N.D. Il’inskaya, S.A. Karandashev, N.M. Latnikova, A.A. Lavrov, B.A. Matveev, A.S. Petrov, M.A. Remennyi, E.N. Sevost’yanov, N.M. Stus’, 2013, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2013, Vol. 39, No. 18, pp. 45–52.

P.N. Brunkov, N.D. Il’inskaya, S.A. Karandashev, A.A. Lavrov, B.A. Matveev , M.A. Remennyi, N.M. Stus’,A.A. Usikova, “Cooled P-InAsSbP/n-InAs/N-InAsSbP double heterostructure photodiodes», Infrared Physics & Technology 64 (2014) 62–65

P.N.Brunkov, N. D. Il’inskaya, S. A. Karandashev, N. M. Latnikova, A. A. Lavrov, B. A. Matveev, A. S. Petrov, M. A. Remennyi, E. N. Sevostyanov, and N. M. Stus’, «P-InAsSbP/no-InAs/n+-InAs photodiodes for operation at moderate cooling (150-220 K)» Fizika i Tekhnika Poluprovodnikov, 48(10). pp. 1394-1397 (2014).

P.N.Brunkov, N. D. Il’inskaya, S. A. Karandashev, N. M. Latnikova, A. A. Lavrov, B. A. Matveev, A. S. Petrov, M. A. Remennyi, E. N. Sevostyanov, and N. M. Stus’, «P-InAsSbP/no-InAs/n+-InAs photodiodes for operation at moderate cooling (150-220 K)», Semiconductors, 2014, Vol. 48, No. 10, pp. 1359–1362. © Pleiades Publishing, Ltd., 2014, ISSN 1063_7826

S.A. Karandashev, B.A. Matveev, V.I. Ratushnyi, M.A. Remennyi, A.Yu. Rybal’chenko, N.M. Stus’, “Current–Voltage Characteristics and Photocurrent Collection in Radially Symmetric Front Surface Illuminated InAsSb(P) Photodiodes”, ISSN 1063_7842, Technical Physics, 2014, Vol. 59, No. 11, pp. 1631–1635. © Pleiades Publishing, Ltd., 2014. Original Russian Text © 2014, published in Zhurnal Tekhnicheskoi Fiziki, 2014, Vol. 84, No. 11, pp. 52–57.              http://link.springer.com/article/10.1134/S1063784214110115

B.A.Matveev, "Semiconductor mid-IR photodiode", RF patent  ¹ 2521156  after patent application ¹ 2011140568 from 05.10.2011. Published 29.02.2014.

N. D. Il’inskaya, S. A. Karandashev, N. G. Karpukhina, A. A. Lavrov, B. A. Matveev, M. A. Remennyi, N. M. Stus’, and A. A. Usikova,  "The 3x3 matrix based on p-InAsSbP/n-InAs single heterostructure diodes" Applied Physics  2014 N6 p 47 (in Russian)

Brunkov P.N. Il`inskaya N.D., Karandashev S.A., Lavrov A.A., Matveev B.A.,  Remennyi M.A., Stus` N.M., Usikova A.A., «InAsSbP/InAs(0.9)Sb(0.1)/InAs DH photodiodes (lambda(0.1) = 5.2 um, 300 K) operating in the 77-353 K temperature range», Infrared Phys. Technol., v.73 ,pp. 232-237 (2015)

B. Matveev "On the Question of terminology in the medium wave infrared optoelectronics", Photonics #3/2015(51), pp. 152-164.

N. D. Il’inskaya, S. A. Karandashev, N. G. Karpukhina, A. A. Lavrov, B. A. Matveev, M. A. Remennyi, N. M. Stus' and A. A. Usikova, “Photodiode 1x64 Linear Array Based on a Double p-InAsSbP/n-InAs0.92Sb0.08/n+-InAs Heterostructure”, Semiconductors, 2016, Vol. 50, No. 5, pp. 646–651. DOI: 10.1134/S1063782616050122

P.N. Brunkov, N.D. Il’inskaya, S.A. Karandashev, N.G. Karpukhina, A.A. Lavrov, B.A. Matveev, M.A. Remennyi a, N.M. Stus’, A.A. Usikova, “Low dark current P-InAsSbP/n-InAs/N-InAsSbP/n+-InAs double heterostructure back-side illuminated photodiodes”, Infrared Physics and Technology (2016), pp. 542-545, DOI information: 10.1016/j.infrared.2016.04.002

P.N. Brunkov, N.D. Il’inskaya, S.A. Karandashev, A.A. Lavrov, B.A. Matveev, M.A. Remennyi, N.M. Stus’ a, A.A. Usikova, “P-InAsSbP/n-InAs single heterostructure back-side illuminated 8 x 8 photodiode array», Infrared Physics & Technology 78 (2016) 249–253,  http://dx.doi.org/10.1016/j.infrared.2016.08.013

A.L. Zakgeim, N.D. Il’inskaya, S.A. Karandashev, A.A. Lavrov, B.A. Matveev, M.A. Remennyy, N.M. Stus’, A.A. Usikova and A.E. Cherniakov, “Spatial Redistribution of Radiation in Flip-Chip Photodiodes Based on Double InAsSbP/InAs Heterostructures”, Semiconductors, 2017, Vol. 51, No. 2, pp. 260–266.

N.D. Il'inskaya, S.A. Karandashev, A.A. Lavrov, B.A. Matveev, M.A. Remennyi, N.M. Stus', A.A. Usikova, "P-InAsSbP/p- InAs 0.88 Sb0.12 /n- InAs 0.88 Sb0.12 /n + -InAs PDs with a smooth p-n junction" Infrared Physics & Technology 88 , 223-227 (2018), doi:  https://doi.org/10.1016/j.infrared.2017.11.003

Natalya D. Il’ inskaya, Sergey A. Karandashev, Al ’bert A. Lavrov, Boris A. Matveev, Maxim A. Remennyi, Nicolay M. Stus ’, and Anna A. Usikova, “InAs0.7Sb0.3 Bulk Photodiodes Operating at Thermoelectric-Cooler Temperatures”, Phys. Status Solidi A 2018, 1700694,    https://doi.org/10.1002/pssa.201700694

N. D. Il’inskaya, S. A. Karandashev, A. A. Lavrov, B. A. Matveev, M. A. Remennyi, N. M. Stus’, and A. A. Usikova, “InAsSbP Photodiodes for 2.6–2.8-um Wavelengths”, Technical Physics, 2018, Vol. 63, No. 2, pp. 226–229.

DOI: 10.1134/S1063784218020172

 

N Dyakonova, S A Karandashev, M E Levinshtein, B A Matveev and M A Remennyi, “Low frequency noise in p-InAsSbP/n-InAs infrared photodiodes”, Semicond. Sci. Technol. 33 (2018) 065016 (5pp), 

https://doi.org/10.1088/1361-6641/aac15d

 

N Dyakonova, S A Karandashev, M E Levinshtein, B A Matveev and M A Remennyi, “Low frequency noise in reverse biased P-InAsSbP/n-InAs infrared photodiodes”, Semicond. Sci. Technol.34(2019) 015013 (5pp)  

DOI: 10.1088/1361-6641/aaf0c6

 

B. A. Matveev, V. I. Ratushnyi, and A. Yu. Rybal’chenko

“Comparative Characteristic Analysis of Thermophotovoltaic p-InAsSbP/n-InAs Converters Irradiated on p- and n-Sides”

ISSN 1063-7842, Technical Physics, 2019, Vol. 64, No. 8, pp. 1164–1167. Russian Text published in Zhurnal Tekhnicheskoi Fiziki, 2019, Vol. 89, No. 8, pp. 1233–1237.

DOI: 10.1134/S1063784219080140

 

N Dyakonova, S A Karandashev, M E Levinshtein, B A Matveev and M A Remennyi, “Room temperature low frequency noise in n+-InAs/n-InAsSbP/InAs/p-InAsSbP double heterostructure infrared photodiodes”, October 2019,  Semiconductor Science and Technology 34(10):105015

DOI: 10.1088/1361-6641/ab3c3e

 

S A Karandashev, A A Klimov, R E Kunkov, A A Lavrov, T S Lukhmyrina, B A Matveev, M A Remennyi, and A A Usikova, “Substrate-removed flip-chip photodiode array based on InAsSbP/InAs double heterostructure”, December 2019 Journal of Physics Conference Series 1410:012028

DOI: 10.1088/1742-6596/1410/1/012028

 

B. A. Matveev, V. I. Ratushnyi, and A. Yu. Rybal’chenko, “Localization of Current Flow in Thermophotovoltaic Converters Based on InAsSbP/InAs Double Heterostructures”, Technical Physics, 2020, Vol. 65, No. 5, pp. 799–804

DOI: 10.1134/S1063784220050187

http://link.springer.com/article/10.1134/S1063784220050187

https://rdcu.be/b4y1G

 

N Dyakonova, S A Karandashev, M E Levinshtein, B A Matveev and M A Remennyi, “Low frequency noise in reverse biased double heterostructure P-InAsSbP/ n-InAs infrared photodiodes”, Semicond. Sci. Technol. 35 (2020) 075010 (5pp) 

https://doi.org/10.1088/1361-6641/ab8756

 

N Dyakonova, Sergei A. Karandashev, M. E. Levinshtein, B A Matveev and M A Remennyi, " Low frequency noise in double heterostructure P-InAsSbP/n-InAs mid-IR photodiodes at cryogenic temperature: photovoltaic mode and forward bias", Infrared Physics & Technology

Available online 18 August 2020, 103460

DOI: 10.1016/j.infrared.2020.103460

 

A A Klimov, R E Kunkov, T S Lukhmyrina, B A Matveev, N M Lebedevaand M A Remennyi,

“Room temperature mid-IR two-color photodiodes with InAs and InAs0.9Sb0.1 absorbing layers”, Journal of Physics: Conference Series 1697 (2020) 012180

International Conference PhysicA.SPb/2020   IOP Publishing

doi:10.1088/1742-6596/1697/1/012180

 

R.E. Kunkov, A.A. Klimov, N.M. Lebedeva, T.C. Lukhmyrina, B.À. Matveev, M.À. Remennyy,

“Photoelectric properties of heterostructures based on InAsSbõ solid solutions (0.3 <x <0.35)”, 2020 J. Phys.: Conf. Ser. 1695 012077

doi:10.1088/1742-6596/1695/1/012077

Klimov A.A., Kunkov R.E., Lavrov A.A., Lebedeva N.M., Lukhmyrina T.C., Matveev B.A., Remennyi M.A.,  « Long-wave infrared InAs0.6Sb0.4 photodiodes grown onto n-InAs substrates»,
Proceedings of the  22ND RUSSIAN YOUTH CONFERENCE ON PHYSICS OF SEMICONDUCTORS AND NANOSTRUCTURES, OPTO- AND NANOELECTRONICS, RYCPS 2020.

 J. Phys.: Conf. Ser., v.1851, 1 ArtNo:#012019, 2021 IOP Publishing Ltd , ISSN:1742-6588
22nd Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2020; St.Petersburg, Russian Federation; 23-27 November 2020

 Lavrov A.A., Matveev B.A., Remennyi M.A., useful model on "Mid-IR Dual band PD" ¹ 203297 after application ¹ 2020123292 from 07 07 2020.

 

Sensors (11)

 

G.Yu.Sotnikova, S.E.Aleksandrov, G.A.Gavrilov, A.A.Kapralov, B.A.Matveev, M.A.Remennyi, M.Saadaoui, D.Zymelka, «Radiometric temperature measurements using In(Ga)As(Sb) backside illuminated photodiodes», Abstract of the 42-th Freiburg Infrared Colloquium, 3-4 March 2015, pp.89-90

Zymelka D., Matveev B., Aleksandrov S., Sotnikova G., Gavrilov G., Saadaoui M.,"Time-resolved study of variable frequency microwave processing of silver nanoparticles printed onto plastic substrates", Flex. Print. Electron. 2 (2017) 045006  (pp.1-10)( DOI: 10.1088/2058-8585/aa900a )

S.E. Aleksandrov, G.A. Gavrilov, A.A. Kapralov, B.A. Matveev, K.L. Muratikov, and G.Yu. Sotnikova, (2018), “Optoelectronic Methods of IR-Photometry in Solving Thermal and Physical Problems” in VII International Conference on Photonics and Information Optics, Energy & Physics, pages 349–361. DOI 10.18502/ken.v3i3.2048

S. E. Aleksandrov, G. A. Gavrilov, A. A. Kapralov, B. A. Matveev, M. A. Remennyi, and G. Yu. Sotnikova, “InAsSb Diode Optical Pairs for Real-Time Carbon Dioxide Sensors”, Technical Physics, 2018, Vol. 63, No. 9, pp. 1390–1395. ISSN 1063-7842

B. A. Matveev, and G. Yu. Sotnikova, “Midinfrared Light-Emitting Diodes Based on À3Â5 Heterostructures in Gas-Analyzer-Equipment Engineering: Potential and Applications in 2014–2018”, Optics and Spectroscopy, 2019, Vol. 127, No. 2, pp. 322–327

DOI: 10.1134/S0030400X19080198

 

B. A. Matveev, "Monolithically integrated evanescent wave sensor"

RF patent ¹ 2727560

 

S. A. Karandashev, B. A. Matveev, M. A. Remennyi and Mohamed Ben Chouikha, patent #  2753854 on “Chemical sensor” after application ¹ 2020141070 with priority date 11 December 2020.

 

N. Dyakonova, S. A. Karandashev, M. E. Levinshtein, B. A. Matveev and M. A. Remennyi, A. A. Usikova,  “Low frequency noise in P-InAsSbP/n-InAs infrared light emitting diode-photodiode pairs”, Infrared Physics and Technology, Volume 117, September 2021, 103867, doi: 10.1016/j.infrared.2021.103867

S. A. Karandashev, T. S. Lukhmyrina, B. A. Matveev, M. A. Remennyi, and A. A. Usikova,“On the Use of Indium Arsenide as the Waveguide Material in the Measurements by Attenuated Total Reflectance”, Optics and Spectroscopy, 2021, Vol. 129, No. 9, pp. 1333–1337. © Pleiades Publishing, Ltd., 2021. ISSN 0030-400X, DOI: 10.1134/S0030400X21090101

Russian Text © The Author(s), 2021, published in Optika i Spektroskopiya, 2021, Vol. 129, No. 9, pp. 1193–1197.

S. A. Karandashev, T. S. Lukhmyrina, B. A. Matveev, M. A. Remennyi, and A. A. Usikova, "P-InAsSbP/n-InAs double heterostructure as an on-chip mid‐IR evanescent wave sensor of liquids", Physica Status Solidi (A) Applications and Materials. DOI: 10.1002/pssa.202100456, Volume 219, Issue 2 2100456 (January 2022).

S.A. Karandashev, A.A. Klimov, T.S. Lukhmyrina, B.A. Matveev, M.A. Remennyi, A.A. Usikova,  “On-chip ATR sensor (λ = 3.4 µm) based on InAsSbP/InAs double heterostructure for the determination of ethanol concentration in aqueous solutions”,  Optics and Spectroscopy, 2022, Vol. 130, No.8, pp. 986 - 991

DOI: 10.21883/EOS.2022.08.54772.3236-22

Lukhmyrina T.S., Klimov A.A., Kunkov R.E., Lebedeva N.M., Matveev B.A., Chernyakov A.E., “Temperature distribution in InAsSbP/InAsSb/InAs double heterostructure on-chip sensors”, St. Petersburg State Polytechnical University Journal. Physics and Mathemat[1]ics. 16 (1.1) (2023) 119–125. https://doi.org/10.18721/JPM.161.120

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Miscellaneous (6)

Usikova A.A.; Il`inskaya N.D.; Matveev B.A.; Shubina T.V.; Kop`ev P.S., “Photonic crystals and Bragg gratings for the mid-IR and terahertz spectral ranges”, Semiconductors, December 2013, Volume 47, Issue 12, pp 1570-1573

 

Junting Liu, Vladislav Khayrudinov, He Yang, Yue Sun, Boris Matveev, Maxim Remennyi, Kejian Yang, Tuomas Haggren, Harri Lipsanen, Fengqiu Wang, Baitao Zhang, Jingliang He, «InAs-Nanowire-Based Broadband Ultrafast Optical Switch», J. Phys. Chem. Lett. 2019, 10, 15, 4429-4436

Publication Date: July 18, 2019

https://doi.org/10.1021/acs.jpclett.9b01626

 

Vladislav Khayrudinov, Tuomas Haggren, Maxim Remennyy, Prokhor Anatolevich Alekseev, Boris Matveev, Harri Kalevi Lipsanen, «Light-emitting InAs nanowires grown by MOVPE directly on flexible plastic substrates», May 2019,

DOI: 10.1109/ICIPRM.2019.8819277,

Conference: 2019 Compound Semiconductor Week (CSW).

 

Vladislav Khayrudinov,  Maxim Remennyi, Vidur Raj, Prokhor Alekseev,  Boris Matveev, Harri Lipsanen, and  Tuomas Haggren, “Direct Growth of Light-Emitting III–V Nanowires on Flexible Plastic Substrates” , ACS Nano 2020, A-H, Publication Date: May 21, 2020

https://doi.org/10.1021/acsnano.0c03184

https://pubs.acs.org/action/showCitFormats?doi=10.1021/acsnano.0c03184&ref=pdf

Vladislav Khayrudinov,  Maxim Remennyi, Vidur Raj, Prokhor Alekseev,  Boris Matveev, Harri Lipsanen, and  Tuomas Haggren, “Direct Growth of Light-Emitting III–V Nanowires on Flexible Plastic Substrates” , ACS Nano 2020, A-H, Publication Date: May 21, 2020

T S Lukhmyrina, M S Shestakov, A V Shvidchenko and B A Matveev,

“Morphology and redispersibility of silver nanoparticles prepared by chemical reduction”, 2020 J. Phys.: Conf. Ser. 1695 012187

doi:10.1088/1742-6596/1695/1/012187

https://iopscience.iop.org/article/10.1088/1742-6596/1697/1/012180

 

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