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Full list of papers published by MIRDOG
2024
S. A. Karandashev, A.A. Lavrov, T. S. Lukhmyrina, B. A. Matveev,
M. A. Remennyi and A. E. Chernyakov, “Current induced cooling in a
metal/n-InAs Structure”,
RSC Applied
Interfaces, DOI: 10.1039/d4lf00032c
S. A. Karandashev, A. A. Lavrov, T. S. Lukhmyrina, B. A. Matveev,
M. A. Remennyi, “Self-cooling in reverse biased p-InAsSbP/n-InAs0.9Sb0.1heterostructures”.
J.
Appl. Phys. 136,
195103 (2024).
https://doi.org/10.1063/5.0213702
2023
Lukhmyrina T.S., Klimov A.A., Kunkov R.E.,
Lebedeva N.M., Matveev B.A., Chernyakov A.E., “Temperature distribution in
InAsSbP/InAsSb/InAs double heterostructure on-chip sensors”, St. Petersburg
State Polytechnical University Journal. Physics and Mathemat[1]ics.
16 (1.1) (2023) 119–125. DOI:
https://doi.org/10.18721/JPM.161.120
A.L. Zakgeim, S.A. Karandashev, A.A. Klimov, R.E. Kunkov, T.S.
Lukhmyrina, B.A. Matveev, M.A. Remennyi, A.A. Usikova, A.E. Chernyakov, “On
heating mechanisms in LEDs based on p-InAsSbP/n-InAs(Sb)”,
Semiconductors, 2023, Vol. 57, No. 1, pp.39-48
DOI: 10.21883/SC.2023.01.55619.4338
https://doi.org/10.21883/SC.2023.01.55619.4338
R.E. Kunkov, A.A. Klimov, N.M. Lebedeva, T.S. Lukhmyrina, B.A.
Matveev, M.A. Remennyy, A.A. Usikova,
“Longwave (λ0.1 = 10 µm,
296 K) infrared photodetectors based on InAsSb0.38 solid solution”, Optics and
Spectroscopy, 2023, Vol. 131, No. 11, 1429.
DOI: 10.61011/EOS.2023.11.58033.5109-23
A.L. Zakgeim , A.A. Klimov , T.S. Lukhmyrina , B.A. Matveev , A.E.
Chernyakov, “ Thermal resistance of LEDs based on a narrow-gap InAsSb solid
solution”, Optics and Spectroscopy, 2023, Vol. 131, No. 11, 1426,
DOI: 10.61011/EOS.2023.11.58032.5201-23
B. A. Matveev, RF
patent # 2788588 on “Chemical
sensor” after
application ¹
2022105193
with priority date
24/03/2022 (in Russian).
2022
S. A. Karandashev, T. S. Lukhmyrina, B. A. Matveev, M. A.
Remennyi, and A. A. Usikova,
"P-InAsSbP/n-InAs
double heterostructure as an on-chip mid‐IR evanescent wave sensor of liquids",
Physica Status Solidi (A) Applications and Materials. DOI: 10.1002/pssa.202100456,
Volume 219, Issue 2 2100456
(January
2022).
N. Dyakonova, S. A. Karandashev, M. E. Levinshtein, B. A. Matveev
, M. A. Remennyi,
«Low frequency noise in p-InAsSbP/n-InAs/n-InAsSbP and p-InAsSbP/n-InAsSbP
mid-IR light emitting diodes»,
Infrared Physics and Technology,
Volume 125, September
2022, 104301
DOI: 10.21883/EOS.2022.08.54772.3236-22
2021
Klimov A.A., Kunkov R.E., Lavrov A.A., Lebedeva N.M., Lukhmyrina
T.C., Matveev B.A., Remennyi M.A.,
« Long-wave
infrared InAs0.6Sb0.4 photodiodes grown onto n-InAs substrates»,
Proceedings of the
22ND RUSSIAN YOUTH CONFERENCE ON PHYSICS OF SEMICONDUCTORS AND
NANOSTRUCTURES, OPTO- AND NANOELECTRONICS, RYCPS 2020.
J.
Phys.: Conf. Ser.,
v.1851, 1 ArtNo:#012019,
2021 IOP
Publishing Ltd ,
ISSN:1742-6588
22nd Russian
Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and
Nanoelectronics, RYCPS 2020; St.Petersburg, Russian Federation; 23-27 November
202
S. A. Karandashev, B. A. Matveev, M. A. Remennyi and Mohamed
Ben Chouikha,
patent # 2753854 on “Chemical
sensor” after
application ¹ 2020141070 with priority date 11 December 2020.
N.
Dyakonova, S. A. Karandashev, M. E. Levinshtein, B. A. Matveev and M. A.
Remennyi, A. A. Usikova,
“Low
frequency noise in P-InAsSbP/n-InAs infrared light emitting diode-photodiode
pairs”,
Infrared Physics and Technology,
Volume 117, September
2021, 103867, doi:
10.1016/j.infrared.2021.103867
S. A.
Karandashev, T. S. Lukhmyrina, B. A. Matveev, M. A. Remennyi, and A. A. Usikova,
“On the Use of Indium Arsenide as the Waveguide Material in the
Measurements by Attenuated Total Reflectance”,
Optics and
Spectroscopy, 2021, Vol. 129, No. 9, pp. 1333–1337. © Pleiades Publishing, Ltd.,
2021. ISSN 0030-400X,
DOI: 10.1134/S0030400X21090101
Russian Text © The Author(s), 2021, published in Optika i
Spektroskopiya, 2021, Vol. 129, No. 9, pp. 1193–1197.
2020
N Dyakonova, S A Karandashev, M E Levinshtein, B A Matveev and M
A Remennyi, “Low frequency noise in reverse biased double heterostructure P-InAsSbP/
n-InAs infrared photodiodes”, Semicond. Sci. Technol. 35 (2020) 075010 (5pp)
https://doi.org/10.1088/1361-6641/ab8756
B. A. Matveev, V. I.
Ratushnyi, and A. Yu. Rybal’chenko, “Localization of Current Flow in
Thermophotovoltaic Converters Based on InAsSbP/InAs Double Heterostructures”,
Technical Physics, 2020, Vol. 65, No. 5, pp. 799–804
DOI:
10.1134/S1063784220050187
http://link.springer.com/article/10.1134/S1063784220050187
https://rdcu.be/b4y1G
Vladislav Khayrudinov,
Maxim Remennyi, Vidur Raj, Prokhor Alekseev, Boris Matveev, Harri Lipsanen, and
Tuomas Haggren, “Direct Growth of Light-Emitting III–V Nanowires on Flexible
Plastic Substrates” , ACS Nano 2020, A-H, Publication Date: May 21, 2020
https://doi.org/10.1021/acsnano.0c03184
https://pubs.acs.org/action/showCitFormats?doi=10.1021/acsnano.0c03184&ref=pdf
N Dyakonova, Sergei A. Karandashev, M. E. Levinshtein,
B A Matveev and M A Remennyi, " Low frequency noise in double
heterostructure P-InAsSbP/n-InAs mid-IR photodiodes at cryogenic
temperature: photovoltaic mode and forward bias",
Infrared Physics & Technology
Available online 18 August 2020, 103460
DOI: 10.1016/j.infrared.2020.103460
A
A Klimov, R E Kunkov, T S Lukhmyrina, B A Matveev, N M Lebedevaand
M A Remennyi,
“Room temperature mid-IR two-color photodiodes with InAs and InAs0.9Sb0.1
absorbing layers”, Journal of Physics: Conference Series
1697 (2020) 012180
International Conference PhysicA.SPb/2020 IOP Publishing
doi:10.1088/1742-6596/1697/1/012180
R.E. Kunkov, A.A. Klimov, N.M. Lebedeva, T.C. Lukhmyrina, B.À.
Matveev, M.À. Remennyy,
“Photoelectric properties of heterostructures based on InAsSbõ
solid solutions (0.3 <x <0.35)”,
2020 J. Phys.: Conf. Ser. 1695 012077
doi:10.1088/1742-6596/1695/1/012077
T S Lukhmyrina, M S Shestakov, A V Shvidchenko and B A Matveev,
“Morphology and
redispersibility of silver nanoparticles prepared by chemical reduction”,
2020 J. Phys.: Conf. Ser. 1695 012187
doi:10.1088/1742-6596/1695/1/012187
https://iopscience.iop.org/article/10.1088/1742-6596/1697/1/012180
RF patent office issued a patent # 2727560 on "Chemical sensor"(Author -
Matveev B.A.). For more details see
DOI: 10.1002/pssa.202100456,
Volume 219, Issue 2 2100456
(January
2022) and
DOI: 10.1134/S0030400X21090101 (September 2021).
2019
N
Dyakonova, S A Karandashev, M E Levinshtein, B A Matveev and M A Remennyi,
“Low frequency noise in reverse biased P-InAsSbP/n-InAs
infrared photodiodes”, Semicond. Sci. Technol.34(2019) 015013 (5pp)
DOI:
10.1088/1361-6641/aaf0c6
S. A. Karandashev, B. A. Matveev, and M. A. Remennyi, «Indium Arsenide-Based
Spontaneous Emission Sources (Review: a Decade Later)», Semiconductors, 2019,
Vol. 53, No. 2, pp. 139–149. Karandashev, S.A., Matveev, B.A. & Remennyi, M.A.
Semiconductors (2019) 53: 139.
https://doi.org/10.1134/S1063782619020131
Junting Liu, Vladislav Khayrudinov, He Yang, Yue Sun, Boris Matveev, Maxim
Remennyi, Kejian Yang, Tuomas Haggren, Harri Lipsanen, Fengqiu Wang, Baitao
Zhang, Jingliang He, «InAs-Nanowire-Based Broadband Ultrafast Optical Switch»,
J. Phys. Chem. Lett. 2019, 10, 15, 4429-4436
https://doi.org/10.1021/acs.jpclett.9b01626
B. A. Matveev, and G. Yu. Sotnikova, “Midinfrared Light-Emitting Diodes Based
on À3Â5 Heterostructures in Gas-Analyzer-Equipment Engineering: Potential and
Applications in 2014–2018”, Optics and Spectroscopy, 2019, Vol. 127, No. 2, pp.
322–327
DOI: 10.1134/S0030400X19080198
B. A. Matveev, V. I. Ratushnyi, and A. Yu. Rybal’chenko,
“Comparative Characteristic Analysis of Thermophotovoltaic p-InAsSbP/n-InAs
Converters Irradiated on p- and n-Sides”,
ISSN 1063-7842, Technical Physics, 2019, Vol. 64, No. 8, pp.
1164–1167. Russian Text published in Zhurnal Tekhnicheskoi Fiziki, 2019, Vol.
89, No. 8, pp. 1233–1237. DOI: 10.1134/S1063784219080140
N Dyakonova, S A Karandashev, M E Levinshtein, B A Matveev and M A Remennyi,
“Room temperature low frequency noise in n+-InAs/n-InAsSbP/InAs/p-InAsSbP double
heterostructure infrared photodiodes”, October 2019, Semiconductor Science and
Technology 34(10):105015
DOI: 10.1088/1361-6641/ab3c3e
Vladislav Khayrudinov, Tuomas Haggren, Maxim Remennyy, Prokhor Anatolevich
Alekseev, Boris Matveev, Harri Kalevi Lipsanen, «Light-emitting InAs nanowires
grown by MOVPE directly on flexible plastic substrates», May 2019, DOI:
10.1109/ICIPRM.2019.8819277, Conference: 2019 Compound Semiconductor Week (CSW).
S A Karandashev, A A Klimov, R E Kunkov, A A Lavrov, T S Lukhmyrina, B A
Matveev, M A Remennyi, and A A Usikova, “Substrate-removed flip-chip photodiode
array based on InAsSbP/InAs double heterostructure”, December 2019 Journal of
Physics Conference Series 1410:012028
DOI: 10.1088/1742-6596/1410/1/012028
2018
N.D.
Il'inskaya, S.A. Karandashev, A.A. Lavrov, B.A. Matveev, M.A. Remennyi, N.M.
Stus', A.A. Usikova,
"P-InAsSbP/p- InAs
0.88 Sb0.12 /n- InAs 0.88 Sb0.12 /n + -InAs PDs with a smooth p-n junction" Infrared
Physics & Technology 88 , 223-227 (2018), doi: https://doi.org/10.1016/j.infrared.2017.11.003
Natalya
D. Il’ inskaya, Sergey A. Karandashev, Al ’bert A. Lavrov, Boris A. Matveev,
Maxim A. Remennyi, Nicolay M. Stus ’, and Anna A. Usikova, “InAs0.7Sb0.3 Bulk
Photodiodes Operating at Thermoelectric-Cooler Temperatures”, Phys. Status
Solidi A 2018, 1700694,
https://doi.org/10.1002/pssa.201700694
N. D.
Il’inskaya, S. A. Karandashev, A. A. Lavrov, B. A. Matveev, M. A. Remennyi, N.
M. Stus’, and A. A. Usikova,
“InAsSbP Photodiodes
for 2.6–2.8-um Wavelengths”, Technical Physics, 2018, Vol. 63,
No. 2, pp. 226–229.
DOI:
10.1134/S1063784218020172
S.E. Aleksandrov, G.A. Gavrilov, A.A.
Kapralov, B.A. Matveev, K.L. Muratikov, and G.Yu. Sotnikova, (2018),
“Optoelectronic
Methods of IR-Photometry in Solving Thermal and Physical Problems”
in VII International Conference on Photonics and Information Optics, Energy &
Physics, pages 349–361. DOI 10.18502/ken.v3i3.2048
N
Dyakonova, S A Karandashev, M E Levinshtein, B A Matveev and M A Remennyi,
“Low frequency
noise in p-InAsSbP/n-InAs infrared photodiodes”, Semicond.
Sci. Technol. 33 (2018) 065016 (5pp), https://doi.org/10.1088/1361-6641/aac15d
S. E. Aleksandrov, G. A. Gavrilov, A. A. Kapralov, B. A. Matveev, M. A.
Remennyi, and G. Yu. Sotnikova,
“InAsSb Diode Optical
Pairs for Real-Time Carbon Dioxide Sensors”, Technical
Physics, 2018, Vol. 63, No. 9, pp. 1390–1395. ISSN 1063-7842
2017
A.L.
Zakgeim, N.D. Il’inskaya, S.A. Karandashev, A.A. Lavrov, B.A. Matveev, M.A.
Remennyy, N.M. Stus’, A.A. Usikova and A.E. Cherniakov,
“Spatial Redistribution of Radiation in
Flip-Chip Photodiodes Based on Double InAsSbP/InAs Heterostructures”,
Semiconductors, 2017, Vol. 51, No. 2, pp. 260–266.
Zymelka D., Matveev B., Aleksandrov S.,
Sotnikova G., Gavrilov G., Saadaoui M.,"Time-resolved study of variable
frequency microwave processing of silver nanoparticles printed onto plastic
substrates",
Flex. Print. Electron. 2 (2017) 045006 (pp.1-10)( DOI: 10.1088/2058-8585/aa900a
)
2016
N. D.
Il’inskaya, S. A. Karandashev, N. G. Karpukhina, A. A. Lavrov,
B. A. Matveev, M. A. Remennyi, N. M. Stus' and A. A. Usikova,
“Photodiode 1x64
Linear Array Based on a Double
p-InAsSbP/n-InAs0.92Sb0.08/n+-InAs
Heterostructure”,
Semiconductors, 2016, Vol. 50, No. 5, pp. 646–651.
DOI: 10.1134/S1063782616050122
P.N.
Brunkov, N.D. Il’inskaya, S.A. Karandashev, N.G. Karpukhina, A.A. Lavrov, B.A.
Matveev, M.A. Remennyi a, N.M. Stus’, A.A. Usikova, “Low dark current P-InAsSbP/n-InAs/N-InAsSbP/n+-InAs
double heterostructure back-side illuminated photodiodes”,
Infrared Physics and
Technology 78 (2016), pp. 542-545, DOI information:
10.1016/j.infrared.2016.04.002
P.N.
Brunkov, N.D. Il’inskaya, S.A. Karandashev, A.A. Lavrov, B.A. Matveev, M.A.
Remennyi, N.M. Stus’ a, A.A. Usikova,
“P-InAsSbP/n-InAs single heterostructure
back-side illuminated 8 x 8 photodiode array», Infrared
Physics & Technology 78 (2016) 249–253,
http://dx.doi.org/10.1016/j.infrared.2016.08.013
Il`inskaya
N.D.,
Matveev B.A.,
Remennyi M.A.
and Usikova A.A., "Method of
producing mid-IR diodes", RF patent
¹ 2599905
(priority date - 11.05.2012).
2015
Brunkov P.N. Il`inskaya N.D.,
Karandashev S.A., Lavrov A.A., Matveev B.A., Remennyi M.A., Stus` N.M., Usikova
A.A., «InAsSbP/InAs(0.9)Sb(0.1)/InAs
DH photodiodes (lambda(0.1) = 5.2 um, 300 K) operating in the 77-353 K
temperature range»,
Infrared Phys. Technol., v.73 ,pp. 232-237 (2015)
B. Matveev,
“Surprises of
Medium-Wave IR LEDs Based on À3Â5 Heterostructures”, Photonics, v.2 (50) pp.:
62-69(2015)
B. Matveev
"On the Question of
terminology in the medium wave infrared optoelectronics", Photonics #3/2015(51),
pp. 152-164.
G.Yu.Sotnikova,
S.E.Aleksandrov, G.A.Gavrilov, A.A.Kapralov, B.A.Matveev, M.A.Remennyi,
M.Saadaoui, D.Zymelka, «Radiometric temperature measurements using In(Ga)As(Sb)
backside illuminated photodiodes»,
Abstract of the 42-th Freiburg Infrared
Colloquium, 3-4 March 2015, pp.89-90
Il`inskaya
N.D.,
Matveev B.A.
and
Remennyi M.A., "Mid-IR PD", RF patent
¹ 2570603 -
(priority date - 23.12.2011).
2014
P.N. Brunkov, N.D. Il’inskaya,
S.A. Karandashev, A.A. Lavrov, B.A. Matveev , M.A. Remennyi, N.M. Stus’,A.A.
Usikova, “Cooled P-InAsSbP/n-InAs/N-InAsSbP double heterostructure
photodiodes», Infrared Physics & Technology 64 (2014) 62–65
P.N.Brunkov, N. D.
Il’inskaya, S. A. Karandashev, N. M. Latnikova, A. A. Lavrov, B. A. Matveev,
A. S. Petrov, M. A. Remennyi, E. N. Sevostyanov, and N. M. Stus’,
«P-InAsSbP/no-InAs/n+-InAs photodiodes for operation at moderate cooling
(150-220 K)»
Fizika i Tekhnika
Poluprovodnikov, 48(10). pp. 1394-1397 (2014).
P.N.Brunkov, N. D.
Il’inskaya, S. A. Karandashev, N. M. Latnikova, A. A. Lavrov, B. A. Matveev,
A. S. Petrov, M. A. Remennyi, E. N. Sevostyanov, and N. M. Stus’,
«P-InAsSbP/no-InAs/n+-InAs photodiodes for operation at moderate cooling
(150-220 K)», Semiconductors, 2014, Vol. 48, No. 10, pp. 1359–1362. ©
Pleiades Publishing, Ltd., 2014, ISSN 1063_7826
S.A. Karandashev, B.A.
Matveev, V.I. Ratushnyi, M.A. Remennyi, A.Yu. Rybal’chenko, N.M. Stus’,
“Current–Voltage Characteristics and Photocurrent Collection in Radially
Symmetric Front Surface Illuminated InAsSb(P) Photodiodes”, ISSN 1063_7842,
Technical Physics, 2014, Vol. 59, No. 11, pp. 1631–1635. © Pleiades
Publishing, Ltd., 2014. Original Russian Text © 2014, published in Zhurnal
Tekhnicheskoi Fiziki, 2014, Vol. 84, No. 11, pp. 52–57.
B. Matveev,
“LEDs
Based On Heterostructures À3Â5 In Gas Analysis Instrument Engineering.
Capabilities And Applications”,
Photonics, #6 (December
2014)
B.A.Matveev, "Semiconductor mid-IR photodiode", RF patent
¹ 2521156
after
patent application ¹ 2011140568 from 05.10.2011. Published 29.02.2014.
2013
N. D. Il’inskaya,
S. A. Karandashev, N. M. Latnikova, A. A. Lavrov, B. A. Matveev, A. S.
Petrov, M. A. Remennyi, E. N. Sevost’yanov, and N. M. Stus’, “Cooled
Photodiodes Based on a Type-II Single p-InAsSbP/n-InAs Heterostructure “ISSN
1063_7850, Technical Physics Letters, 2013, Vol. 39, No. 9, pp. 818–821. ©
Pleiades Publishing, Ltd., 2013. Original Russian Text © N.D. Il’inskaya,
S.A. Karandashev, N.M. Latnikova, A.A. Lavrov, B.A. Matveev, A.S. Petrov,
M.A. Remennyi, E.N. Sevost’yanov, N.M. Stus’, 2013, published in Pis’ma v
Zhurnal Tekhnicheskoi Fiziki, 2013, Vol. 39, No. 18, pp. 45–52.
Parthiban
Santhanam, Duanni Huang, Rajeev J. Ram, Maxim A. Remennyi, and Boris A.
Matveev, “Room
Temperature Thermo-Electric Pumping in mid-Infrared Light-Emitting Diodes”,
Appl. Phys. Lett. 103 (19), 183513 (1 November 2013); doi: 10.1063/1.4828566
Usikova A.A.; Il`inskaya N.D.;
Matveev B.A.; Shubina T.V.; Kop`ev P.S., “Photonic crystals and Bragg
gratings for the mid-IR and terahertz spectral ranges”,
Semiconductors, December 2013,
Volume 47,
Issue 12,
pp 1570-1573
2012
N. D.
Il’inskaya, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, and N. M. Stus’, “Uncooled Photodiodes Based on InAsSb(P) with Long-Wavelength Sensitivity
Boundary at λ
= 5.8
μm”,
ISSN
1063_7850, Technical Physics Letters, 2012, Vol. 38, No. 3, pp.
242–244..Original Russian Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2012, Vol.
38, No. 5, pp. 85–90.
(DOI) 10.1134/S1063785012030078
N. D.
Il’inskaya, A. L. Zakgeim, S. A. Karandashev, B. A. Matveev, V. I. Ratushnyi,
M. A. Remennyi, A. Yu. Rybal’chenko, N. M. Stus’, and A. E. Chernyakov, Front
Surface Illuminated InAsSb Photodiodes (Long_Wavelength Cutoff
λ0.1
= 4.5
μm)
Operating at Temperatures of 25–80°C,
Semiconductors, 2012, Vol. 46, No. 5, pp. 690–695,
Original Russian Text © N.D. Il’inskaya, A.L. Zakgeim, S.A. Karandashev,
B.A. Matveev, V.I. Ratushnyi, M.A. Remennyi, A.Yu. Rybal’chenko, N.M. Stus’,
A.E. Chernyakov, 2012, published in Fizika i Tekhnika Poluprovodnikov, 2012,
Vol. 46, No. 5, pp. 708–713.
Boris
Matveev,
Maxim Remennyy, Karandashev Sergey, Kimmo Keränen, Heini
Saloniemi, Jyrki Ollila, Tom Kuusela, Ismo Kauppinen,
«Microimmersion
lens LEDs for portable photoacoustic methane sensors»,
IMCS 2012 - The 14th International Meeting on
Chemical Sensors May 20 - 23, 2012, Nürnberg/Nuremberg, Germany, Book of
abstracts, p.241-243, DOI 10.5162/IMCS2012/2.5.5
Trukhin,VN; Golubo,AO; Lyutetsky,AV;
Matveyev,BA; Pikhtin,NA; Samoilov,LL; Sapozhnikov,ID; Tarasov,IS;
Fel`shtyn,ML; Khor`kov,DP,
“Diagnostics
of semiconductor structures by means of an apertureless near-field terahertz
microscope “,
2012,
Radiophys. Quantum Electron., v.54, 8-9,
pp/: 577-584
N. V. Zotova, S. A. Karandeshev, B. A. Matveev,
M. A. Remennyĭ, and N.M. Stus’, “Radiation distribution of 3.4-µm immersion
LEDs in the far field” , Journal of Optical Technology, Vol. 79, Issue 9,
pp. 571-575 (2012)
http://dx.doi.org/10.1364/JOT.79.000571
K. Keränen, ,J.
Ollila,
H. Saloniemi,
B. Matveev,
J. Raittila,
A. Helle,
I. Kauppinen,
T. Kuusela,
L. Pierno,
P. Karioja,
M. Karppinen,
“Portable Methane Sensor Demonstrator based on LTCC Differential Photo
Acoustic Cell and Silicon Cantilever”,
Procedia Engineering,
Volume 47,
2012, Pages 1438–1441.
2011
N. V. Zotova,
S. A. Karandashev, B. A. Matveev, M. A. Remennyy, A. Yu.
Rybal’chenko,
and N. M. Stus’, ”Spatial
nonuniformity of current flow and its consideration in determination of
characteristics of surface illuminated InAsSbP/InAs-based photodiodes”,
Semiconductors, 2011, Vol. 45, No. 4, pp. 543–549. © Pleiades Publishing, Ltd.,
2011. ISSN 1063_7826,
DOI 10.1134/S1063782611040245
Original
Russian Text © N.V. Zotova, S.A. Karandashev, B.A. Matveev, M.A. Remennyy, A.Yu.
Rybal’chenko, N.M. Stus’, 2011, published in Fizika i Tekhnika Poluprovodnikov,
2011, Vol. 45, No. 4, pp. 554–559.
G.A.
Gavrilov, B.A. Matveev, G.Yu. Sotnikova, “Limiting Sensitivity of
Photodetectors Based on A3B5 Photodiodes for Middle Infrared Range”, ISSN
1063_7850, Technical Physics Letters, 2011, Vol. 37, No.9, pp. 866–869. ©
Pleiades Publishing, Ltd., 2011.
Original Russian Text © G.A. Gavrilov, B.A. Matveev, G.Yu.
Sotnikova, 2011, published in Pis’ma v Zhurnal Tekhnichesko³ Fiziki, 2011,
Vol. 37, No. 18, pp. 50–57.
2010
Sotnikova,
G. Y.; Gavrilov, G. A.; Aleksandrov, S. E.; Kapralov, A. A.; Karandashev, S. A.;
Matveev, B. A.; Remennyy, M. A. "Low Voltage CO2-Gas Sensor Based
on III–V Mid-IR Immersion Lens Diode Optopairs: Where we Are and How Far we Can
Go?" Sensors Journal, IEEE Volume 10, Issue 2, Feb. 2010 Page(s): 225 – 234
Digital Object Identifier 10.1109/JSEN.2009.2033259
B.A.
Matveev, Yu.M. Zadiranov, A. L. Zakgeim, N.D. Il'inskaya, S.A. Karandashev, M.A.
Remennyy, N.M. Stus', A. A. Usikova, A. E. Cherniakov, “InGaAsSb LED arrays (λ
= 3.7 um) with Photonic Crystals”
Photonic and
Phononic Crystal Materials and Devices X, edited by Ali Adibi, Shawn-Yu Lin,
Axel Scherer, Proc. of SPIE Vol. 7609, 76090I-1 -5 · doi: 10.1117/12.841689
B.A.
Matveev, A.V. Ankudinov, N.V. Zotova, S.A. Karandashev, T.V. L’vova, M.A.
Remennyy, A.Yu. Rybal’chenko, N.M. Stus’, “Properties
of mid-IR diodes with n-InAsSbP/n-InAs interface” (Proceedings
Paper), Published 25 February 2010 Vol.
7597:
Physics and Simulation of Optoelectronic Devices XVIII,
Bernd Witzigmann;
Fritz Henneberger;
Yasuhiko Arakawa;
Marek Osinski,
Editors, 75970G
K.
Keränen, K. Kautio, J. Ollila, M. Heikkinen, I. Kauppinen, T. Kuusela, B.
Matveev, M. E.McNie, R. M. Jenkins, P. Karioja, ”Differential
photo-acoustic gas cell based on LTCC for ppm gas sensing”,
(Proceedings Paper) Published 23 February 2010 Vol.
7607:
Optoelectronic Interconnects and Component Integration IX,
Alexei L.
Glebov;
Ray T. Chen,
Editors, 760714
Karioja,P; Keranen,K; Kautio,K; Ollila,J; Heikkinen,M; Kauppinen,I; Kuusela,T;
Matveev,B; McNie, ME; Jenkins,RM; Palve,J
“LTCC-based differential photo acoustic cell for ppm gas sensing”
Proc. SPIE, v.7726, pages: #77260H 2010 SPIE ISSN: 0277-786X
T. Kuusela,
J. Peura, B. A. Matveev, M. A. Remennyy, and N. M. Stus’,
“Photoacoustic effect induced by negative luminescence device”, J.Appl.Phys.,
108, 014903 (2010); doi:10.1063/1.3456499
2009
B.A. Matveev,
Yu. M. Zadiranov, A. L. Zakgeim, N. V. Zotova N. D. Il'inskaya, S. A.
Karandashev, M. A. Remennyy, N. M. Stus', A. A. Usikova, O.A. Usov, A.E.
Cherniakov “Midinfrared (λ=
3.6 um) LEDs and arrays based on InGaAsSb with photonic crystals”,
Photonic and Phononic Crystal Materials and Devices IX, edited by Ali Adibi,
Shawn-Yu Lin, Axel Scherer, Proc. of SPIE Vol. 7223, 72231B © 2009 SPIE · CCC
code: 0277-786X/09/$18 · doi: 10.1117/12.808130 Proc. of SPIE Vol. 7223
72231B-1
A. L.
Zakhgeim, N. V. Zotova, N. D. Il’inskaya, B. A. Matveev^, M. A. Remennyi, N. M.
Stus’, and A. E. Chernyakov «Room-Temperature Broadband InAsSb Flip-Chip
Photodiodes with
λ
cut off
= 4.5 um”
Semiconductors, 2009, Vol. 43, No. 3, pp. 394–399.
DOI
10.1134/S1063782609030257
A. L. Zakhgeim,
N. V. Zotova, N. D. Il’inskaya, B. A. Matveev^, M. A. Remennyi, N. M. Stus’, and
A. E. Chernyakov ”Array of InGaAsSb light-emitting diodes (λ = 3.7
um)”,
Semiconductors, 2009, Vol. 43, No. 4, pp. 508–513.
http://www.springerlink.com/openurl.asp?genre=article&id=doi:10.1134/S1063782609040198
DOI
10.1134/S1063782609040198
A.
L. Zakhgeim, N. D. Il’inskaya, S. A. Karandashev, B. A. Matveev, M. A. Remennyi,
A. E. Chernyakov and A. A. Shlenskii “Emission Distribution in GaInAsSb/GaSb
Flip-Chip Diodes”, Semiconductors, 2009, Vol. 43, No. 5, pp. 662–667. ©
Pleiades Publishing, Ltd., 2009. Original Russian Text © A.L. Zakgeim, N.D.
Il’inskaya, S.A. Karandashev, B.A. Matveev, M.A. Remennyi, A.E. Cherniakov, A.A.
Shlenskii, 2009, published in Fizika i Tekhnika Poluprovodnikov, 2009, Vol. 43,
No. 5, pp. 689–694.
S. E.
Aleksandrov, G. A. Gavrilov, A. A. Kapralov, B. A. Matveev, G. Yu. Sotnikova,
and M. A. Remennyi, “Simulation of Characteristics of Optical Gas Sensors
Based on Diode Optopairs Operating in the Mid-IR Spectral Range” ISSN
1063_7842, Technical Physics, 2009, Vol. 54, No. 6, pp. 874–881. © Pleiades
Publishing, Ltd., 2009. Original Russian Text © S.E. Aleksandrov, G.A. Gavrilov,
A.A. Kapralov, B.A. Matveev, G.Yu. Sotnikova, M.A. Remennyi, 2009, published in
Zhurnal Tekhnichesko³
Fiziki, 2009, Vol. 79, No. 6, pp. 112–118.
T. Kuusela,
J. Peura, B. A. Matveev , M. A. Remennyy , N. M. Stus’ , «Photoacoustic gas
detection using a cantilever microphone and III–V mid-IR LEDs», Vibrational
Spectroscopy, 51(2), 289-293 (2009).
2008
N.
V. Zotova, N. D. Il’inskaya, S. A. Karandashev, B. A. Matveev ,M. A. Remennyi,
and N. M. Stus’”Sources of Spontaneous Emission Based on Indium Arsenide”
Semiconductors, 2008, Vol. 42, No. 6, pp. 625–641. © Pleiades Publishing, Ltd.,
2008. Original Russian Text © N.V. Zotova, N.D. Il’inskaya, S.A. Karandashev,
B.A. Matveev, M.A. Remennyi, N.M. Stus’, 2008, published in Fizika i Tekhnika
Poluprovodnikov, 2008, Vol. 42, No. 6, pp. 641–657.
Yu. M.
Zadiranov, N. V. Zotova, N. D. Il’inskaya, S. A. Karandashev, B. A. Matveev , M.
A. Remenny Oe , N. M. Stus’, and A. A. Usikova “Optically Pumped Midinfrared
( lambda = 3.6 um) Light-Emitting Diodes Based on Indium Arsenide with Photonic
Crystals” Technical Physics Letters, 2008, Vol. 34, No. 5, pp. 405–407. ©
Pleiades Publishing, Ltd., 2008. Original Russian Text © Yu.M. Zadiranov, N.V.
Zotova, N.D. Il’inskaya, S.A. Karandashev, B.A. Matveev, M.A. Remenny , N.M.
Stus’, A.A. Usikova, 2008, published in Pis’ma v Zhurnal Tekhnichesko i Fiziki,
2008, Vol. 34, No. 10, pp. 1–7.
A. L.
Zakgeim, N. V. Zotova N. D. Il'inskaya, S. A. Karandashev, B.A.Matveev, M. A.
Remennyy, N. M. Stus', A. A. Usikova and A.E. Cherniakov “IR
images of InAsSbP LEDs 3 um spectral range”,
(http://www.vimi.ru/applphys/appl-08/08-6/08-6-23r.htm),
Prikladnaya Fizika (Applied Physics), No. 6, pp. 143-148 (in Russian)
2007
V. I. Ivanov-Omskii and B. A.
Matveev ”Negative Luminescence and Devices Based on this Phenomenon (REVIEW)”,
SEMICONDUCTORS Vol. 41 No. 3 247-258 (2007) Original Russian Text published in
Fizika i Tekhnika Poluprovodnikov, 2007, Vol. 41, No. 3, pp. 257–268.
M. A.
Remennyy; B. A. Matveev; N. V. Zotova; S. A. Karandashev; N. M. Stus; N. D.
Ilinskaya “InAs and InAs(Sb)(P) (3-5
μm
)
immersion lens photodiodes for portable optic sensors”
SPIE
Proceedings
Vol. 6585
(Optical Sensing Technology and Applications) , Editor(s): Francesco Baldini;
Jiri Homola; Robert A. Lieberman; Miroslav Miler, Date: 1 May 2007, ISBN:
9780819467133. , 658504, DOI: 10.1117/12.722847
Tetyorkin,V.V.;
Sukach,A.V.; Stary,S.V.; Zotova,N.V.; Karandashev,S.A.; Matveev,B.A.;
Remennyi,M.A.; Stus,N.M., “Performance of InAs-based infrared photodiodes”,
Proc. SPIE , v.6585, #658520 (Optical Sensing Technology and Applications) ,
Editor(s): Francesco Baldini; Jiri Homola; Robert A. Lieberman; Miroslav Miler,
Date: 1 May 2007.
S.A.
Karandashev, B.A. Matveev, M.A. Remennyi, A.A. Shlenskii, L.S. Lunin, V.I.
Ratushnyi, A.V. Koryuk, N.G. Tarakanova,, “Properties of GaInAsSb/GaSb
(Lambda = 1.8–2.3 μm
) Immersion Lens Photodiodes at 20–140 C”
Semiconductors, 2007, Vol. 41, No. 11, pp. 1369–1374. 2007, published in Fizika
i Tekhnika Poluprovodnikov, 2007, Vol. 41, No. 11, pp. 1389–1394.
2006
N.V. Zotova, N.D. Il’inskaya,
S.A. Karandashev, B.A. Matveev, M.A. Remennyi, N.M. Stus’, A.A. Shlenski , «The
Flip-Chip InGaAsSb/GaSb LEDs Emitting at a Wavelength of 1.94 μm
»,
Semiconductors 2006, Vol. 40, No. 3, pp. 351–356 ( published in Fizika i
Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 3, pp. 356–361).
Boris Matveev, Nonna Zotova,
Natalya Il'inskaya, Sergey Karandashev, Maxim Remennyi, Nicolay Stus', Anatoly
Kovchavtsev, Georgii Kuryshev, Vladimir Polovinkin, Natalya Tarakanova
“3.3 um high brightness LEDs”( paper # 0891-EE01-04 ), Progress in
Semiconductor Materials V -- Novel Materials and Electronic and Optoelectronic
Applications, MRS Proceedings Volume 891, Editors: L.J. Olafsen, R.M. Biefeld,
M.C. Wanke, A.W. Saxler (http://www.mrs.org/s_mrs/sec_subscribe.asp?CID=6214&DID=173799&action=detail)
N. V. Zotova, N. D.
Il’inskaya, S. A. Karandashev, B. A. Matveev^, M. A. Remennyi, and N. M. Stus’
“Flip-Chip LEDs with Deep Mesa, Emitting at 4.2 μm
“, Semiconductors, 2006, Vol.
40, No. 6, pp. 697–703.
Boris A.Matveev ,
”LED-Photodiode Opto-pairs” in
Mid-infrared Semiconductor Optoelectronics, Springer Series in OPTICAL
SCIENCE, ISSN 0342-4111, pp. 395- 428, 2006
N. V. Zotova , N. D.
Il’inskaya , S. A. Karandashev , B. A. Matveev , M. A. Remenny N. M. Stus’ , V.
V. Shustov , and N. G. Tarakanova, “InAs Flip-Chip LEDs with InGaAsSb Buffer
Layers”, Semiconductors, 2006, Vol. 40, No. 8, pp. 977–981 (Original Russian
Text published in Fizika I Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 8, pp.
1004–1008)
2005
N. V. Zotova, S. A. Karandashev, B. A. Matveev^, M. A. Remennyi ,N. M. Stus’,
and N. G. Tarakanova. ”Luminescence of Multilayer Structures Based on InAsSb at
λ= 6–9 µm” Semiconductors, Vol. 39, No. 2, 2005, pp. 214–217. Translated from
Fizika i Tekhnika Poluprovodnikov, Vol. 39, No. 2, 2005, pp. 230–233.
B. Matveev.,
N. Zotova, N. Il’inskaya, S. Karandashev, M. Remennyi,
and
N. Stus’, “Spontaneous and
stimulated emission in InAs LEDs with cavity formed by gold anode and
semiconductor/Air interface”,
phys. stat. sol. (c)
2,
No. 2, 927–930 (2005)
B.A.
Matveev, N.V. Zotova, N.D. Il’inskaya, S.A. Karandashov, M.A. Remennyi, N.M.
Stus', G.N. Talalakin, “Radiation Source”, US patent
# 6
876 006 with grant date 5 April 2005.
T.G.J. Jones, B. Matveev, V.
Vanshteyn, C.Besson, O.C. Mullins and L. Jiang, “Method and Sensor for
monitoring gas in a downhole environment” UK Patent 2402476, published
03.08.2005
V.V.
Tetyorkin, A.V. Sukach, S.V. Stariy, B.A. Matveev, N.V. Zotova, S.A. Karandashev,
M.A. Remennyi, N.M. Stus, "p-InAsSbP/n-InAs photodiodes for IR optoelectronic
sensors" Book of abstracts of
the SPIE conference on Optics
and Optoelectronics in Warsaw (Poland). 30 August
2005
S.A.Aleksandrov, G.A.Gavrilov, A.A.Kapralov, S. A. Karandashev, N. V. Zotova, ,
B. A. Matveev, M. A. Remennyi, N. M. Stus’, G.Yu.Sotnikova and Petrov V.A.Single
channel gas analyzers based on immersion lens Mid-IR diode optopairs, Book of
abstracts of the 6th International Conference
"Mid-Infrared Optoelectronics
Materials and Devices (MIOMD-VII), September 2005, Lancaster, UK
B. A.
Matveev, N. V. Zotova, N.D.Il’inskaya, S. A. Karandashev, M. A. Remennyi, N. M.
Stus’, V.V.Shustov and A.A.Shlenskii, “Mid-IR deep mesa LEDs”, Book of abstracts
of the 6th International Conference
"Mid-Infrared Optoelectronics
Materials and Devices (MIOMD-VII), September 2005, Lancaster, UK
B. A.
Matveev, N. V. Zotova, N.D.Il’inskaya, S. A. Karandashev, M. A. Remennyi, N. M.
Stus’ and V.V.Shustov , “3.3-4.3 μm
high brightness LEDs”, Digest of the MRS Fall-2005 conference, Symposium EE: Progress in
Semiconductor Materials V—Novel Materials and Electronic and Optoelectronic
Applications, November 28 - December 2, Boston, MA, USA
S.A.
Aleksandrov, G.A. Gavrilov, A.A. Kapralov, , B.A. Matveev, Petrov V.A.*, M.A.
Remennyi, G.Yu. Sotnikova, “ Portable gas analyzers based on immersion lens Mid-IR
diode optopairs: model, construction and testing” VIII International Conference
For Young Researchers , Wave Electronics and Its Applications in Information and
Telecommunication Systems, 4-5 September 2005, St.Petersburg
200 4
M.A. Remennyi, B.A. Matveev, N.V. Zotova, S.A. Karandashev,
N.M. Stus' and G.N. Talalakin. "InGaAsSb negative luminescent devices with
built-in cavities emitting at 3.9 μm
", Physica E: Low-dimensional Systems and
Nanostructures, Vol. 20(3-4), pp. 548-552 (2004)
N. V. Zotova, S. A. Karandashev, B.
A. Matveev, M. A. Remennyi, N. M. Stus’, N. A. Voronova, G. M. Gusinskii, and V.
O. Naydenov, “Strongly Compensated InAs Obtained by Proton Irradiation“,
Technical Physics Letters, Vol. 30, No. 1, 2004, pp. 15–18. Translated from
Pis’ma v Zhurnal Tekhnicheskoy Fiziki, Vol. 30, No. 1, 2004, pp. 35–42.
N.V. Zotova, N.D. Il’inskaya,
S.A. Karandashev, B.A. Matveev, M.A. Remennyi, N.M. Stus’, V.V. Shustov
“InAs light-emitting diodes with cavity formed by anode contact and
semiconductor/air interface” Semiconductors, Vol. 38,
No. 10, 2004, pp. 1–4. Translated from Fizika i Tekhnika Poluprovodnikov, Vol.
38, No. 10, 2004, pp. 1270–1274.
N. V.
Zotova, N .D. Il’inskaya, S. A. Karandashev, B. A. Matveev, M. A. Remennyi and
N. M. Stus’ InAs and InAsSbP Flip-chip LEDs for Fiber Optic Liquid Sensing in
the 3-3.3 µm spectral range Book of abstracts of the 6th International
Conference
"Mid-Infrared Optoelectronics Materials and
Devices (MIOMD-VI)" (June 28 - July 02 2004, St.Petersburg 137-138
N. V.
Zotova, N .D. Il’inskaya, S. A. Karandashev, B. A. Matveev, M. A. Remennyi and
N. M. Stus’ Vertically emitting InAs LEDs and lasers with mirror anode
Book of
abstracts of the 6th International Conference
"Mid-Infrared Optoelectronics Materials and
Devices (MIOMD-VI)" (June 28 - July 02 2004, St.Petersburg
Volodymyr
Malyutenko, Oleg Malyutenko, Andrey Zinovchuk, Nonna Zotova, Sergey Karandashev,
Boris Matveev, Maxim Remennyi, Nicolay Stus “InAs(Sb) LEDs and negative
luminescent devices for dynamic scene simulation in the first atmospheric window
(3-5 μm
)” Book of abstracts of the 6th International Conference
"Mid-Infrared Optoelectronics Materials and
Devices (MIOMD-VI)" (June 28 - July 02 2004, St.Petersburg)
200 3
M Aidaraliev, N V Zotova, N D Il’inskaya, S A Karandashev, B
A Matveev, M A Remennyi, N M Stus’ and G N Talalakin
“InAs and InAsSb LEDs with built-in cavities”
Semicond. Sci. Technol.
18 (2003) 269–272
μm spectral range” Sensors & Actuators B: Chemical, Volume
91, Issues 1-3 , 1 June 2003, Pages 256-261
M. Aidaraliev, N.V. Zotova, S.A. Karandashev, B.A. Matveev,
M.A. Remennyi, N.M. Stus., G.N. Talalakin
“A negative 3.9 μm luminescence in InGaAsSb-based
diodes” Semiconductors 37, N 8 ( 2003), pp.927-930
Boris A. Matveev, Meyrhan Ayidaraliev, Nonna V. Zotova,
Sergey A. Karandashov, Natalia D. Il’inskaya, Maxim A. Remennyi, Nikolai M. Stus',
Georgii N. Talalakin, «Flip-chip bonded InAsSbP and InGaAs LEDs and detectors
for the 3 m m Spectral Region” IEE
Proc.-Optoelectronics 2003, v.150, No 4, pp.356-359
B.A. Matveev, N.V. Zotova, S.A. Karandashev, M.A. Remennyi,
N.M. Stus' and G.N. Talalakin “3.4 mm “Flip-chip”
LEDs for Fiber Optic Liquid Sensing” Proceedings of the 1-st International
CONFERENCE on ADVANCED OPTOELECTRONICS and LASERS (CAOL'2003), September 16-20,
2003 Alushta, Crimea, Ukraine v.2, pp138-140
2002
B. A. Matveev, N. V. Zotova, N .D. Il’inskaya,
S. A. Karandashev, M. A. Remennyi, N. M. Stus’ and G. N. Talalakin "Towards
efficient mid-IR LED operation: optical pumping, extraction or injection of
carriers? ”, J.Mod.Optics, v.49 (2002), No 5/6, pp. 743-756
B. A. Matveev, N. V. Zotova, S. A. Karandashev,
M. A. Remennyi, N. M. Stus’ and G. N. Talalakin “Towards longwave (5-6 μm
) LED operation at 80oC : injection
or extraction of carriers?”, IEE Proceedings - Optoelectronics v. 149 (2002) ,
Issue 1, pp. 33 - 35.
M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev,
M. A. Remennyi, N. M. Stus’, and G. N. Talalakin, “Optically Pumped
“Immersion-Lens” Infrared Light Emitting Diodes Based on Narrow-Gap III–V
Semiconductors”, Semiconductors, vol. 36(2002), No 7, pp.828-831
M. Aydaraliev, N. V. Zotova, S. A. Karandashov, B. A. Matveev,
M. A. Remennyi, N. M. Stus', G. N. Talalakin, W. W. Bewley, J. R. Lindle, and J.
R. Meyer, “6 W InGaAsSb(Gd)/InAsSbP double-heterostructure diode lasers emitting
at l =3.3 µm), Applied Physics Letters -- August 12,
2002 -- Volume 81, Issue 7, pp. 1166-1167
M. A’daraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev,
M. A. Remennyi, N. M. Stus’, G. N. Talalakin, V. V. Shustov, V. V. Kuznetsov,
and E. A. Kognovitskaya, “Lattice-Matched GaInPAsSb/InAs Structures for Devices
of Infrared Optoelectronics”. Semiconductors, Vol. 36, No. 8, 2002, pp. 944–949.
Matveev, Boris A.; Zotova, Nonna V.; Karandashev, Sergey A.;
Remennyi, Maxim A.; Stus', Nikolai M.; Talalakin, Georgii N. “Backside
illuminated In(Ga)As/InAsSbP DH photodiodes for methane sensing at 3.3 μm
”,
Proc. SPIE Vol 4650, p.173-178, Photodetector Materials and Devices VII (2002),
Alexandrov, S. E.; Gavrilov, Gennadii A.; Kapralov, A. A.;
Karandashev, Sergey A.; Matveev, Boris A.; Sotnikova, Galina Y.; Stus', Nikolai
M. “Portable optoelectronic gas sensors operating in the mid-IR spectral range
(lambda=3-5 μm
)”, Proc. SPIE Vol.4680, pp. 188-194, Second International
Conference on Lasers for Measurement and Information Transfer, Vadim E.Privalov,
Ed. (2002)
Aydaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev,M.
A. Remennyi, N. M. Stus’, G. N. Talalakin, and V. V. Shustov “Two-Wavelength
Emission from a GaInPAsSb/InAs Structure with a Broken-Gap Isotype
Heterojunction and a p–n Junction in the Substrate” Technical Physics Letters,
Vol. 28, No. 12, 2002, pp. 1001–1003. Translated from Pis’ma v Zhurnal
Tekhnicheskoi Fiziki, Vol. 28, No. 23, 2002, pp. 58–62.
2001
M. Aidaraliev, N. V. Zotova, S. A. Karandashev,
B. A. Matveev, M. A. Remennyi, N. M. Stus’, and G. N. Talalakin “Negative
Luminescence in p-InAsSbP/n-InAs Diodes”, Semiconductors Vol.35 (2001), No 3,
pp.335 – 338
N. V. Zotova, S. A. Karandashev, B. A. Matveev,
M. A. RemennyÏ, N. M. Stus’, G. N. Talalakin, and V. V. Shustov, “Optically
Pumped Mid-Infrared InGaAs(Sb) LEDs” Semiconductors Vol.35 (2001), No 3, pp.371
– 374
M.
Aidaraliev, N. V.
Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi
N. M. Stus’, and G. N. Talalakin ,”Light Emitting Diodes for the Spectral Range
l = 3.3-4.3 m m Fabricated
from InGaAs and InAsSbP Solid Solutions: Electroluminescence in the Temperature
Range 20–180°C (Part 2)” Semiconductors, Vol. 35, No.
5, 2001, pp. 598–604. Translated from Fizika i Tekhnika Poluprovodnikov, Vol.
35, No. 5, 2001, pp. 619–625.
M.
Aydaraliev, N. V.
Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi,
N. M. Stus’, and G. N. Talalakin “High Power InGaAsSb(Gd)/InAsSbP Double
Heterostructure Lasers (l = 3.3 μm
)”Semiconductors, Vol. 35, No. 10,
2001, pp. 1208–1212. Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 35,
No. 10, 2001, pp. 1261–1265.
V. K. Malyutenko, O.Yu.Malyutenko, A. D.
Podoltsev, I.N.Kucheryavaya, A.Dazzi, N.Gross, J.-M.Ortega, S.A.Karandashev, B.
A. Matveev, N. M. Stus', “Heat transfer effect on performance of 3-5 μm LEDs
operating at T>300 K”, Conference on mid-IR optoelectronics materials and
devices MIOMD 2001, Montpellier, 1-4/04/2001, Conference digest, p.108
B.A. Matveev, M. A'daraliev, N.V. Zotova, S.A. Karandashev, M.A. Remenniy, N.M. Stus', G.N. Talalakin, V.K. Malyutenko and O.Yu.
Malyutenko “Negative luminescence from InAsSbP-based diodes in the 4.0-4.3 μm
range”, Testing, Reliability, and Applications of
Optoelectronic Devices, Editor(s): Aland K. Chin and Niloy K. Dutta, SPIE
Proceedings Vol. 4285, pp.109-117 (2001)
B.A. Matveev, N.V. Zotova, S.A. Karandashev, M.A. Remenniy,
N.M. Stus', G.N. Talalakin, “III-V optically pumped mid-IR LEDs”, Proc. SPIE
vol. 4278, pp. 189-196, Light-Emitting Diodes: Research, Manufacturing, and
Applications V, H. Walter Yao, E. Fred Schubert, Eds.(2001)
Matveev, Boris A.; Aydaraliev, Meyrhan; Zotova, Nonna V.;
Karandashov, Sergey A.; Remennyi, Maxim A.; Stus', Nikolai M.; Talalakin,
Georgii N. “High-power and single-mode DH InGaAsSb(Gd)/InAsSbP (l
=3.3 μm ) diode lasers”, Proc. SPIE Vol. 4278, p.
13-18, Light-Emitting Diodes: Research, Manufacturing, and Applications V, H.
Walter Yao; E. Fred Schubert; Eds.
M.
A daraliev, N. V.
Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi
, N. M. Stus’, and G. N. Talalakin ,“Radiative Recombination via Direct
Optical Transitions in InGaxAs (0 <x< 0.16)
Solid Solutions”, Semiconductors, Vol. 35, No. 12, 2001, pp. 1369–1371.
V. K. Malyutenko, O.Yu.Malyutenko, A. D.
Podoltsev, I.N.Kucheryavaya, B. A. Matveev, M. A. Remennyi, N. M. Stus',
“CURRENT CROWDING IN InAsSb LED STRUCTURES”, Applied Physics Letters, v.79,
issue 25, p. 4228-4230, December 17, 2001
2000
M. Aidaraliev, N. V. Zotova, S. A. Karandashev,
B. A. Matveev, M. A. Remenniy N. M. Stus', and G. N. Talalakin, “Light Emitting
Diodes for the Spectral Range of l =3.3–4.3 µm
Fabricated from the InGaAs- and InAsSbP-Based Solid Solutions:
Electroluminescence in the Temperature Range of 20–180°C”, Semiconductors,
vol.34 (2000), No 1, pp.102-105
M.Aidaraliev, N.V..Zotova, S.A.Karandashov,
B.A. Matveev, M.A.Remennyi, N.M.Stus', G.N. Talalakin , T. Beyer and R. Brunner
«Spectral Characteristics of Lasers Based on InGaAsSb/InAsSbP Double
Heterostructures (l =3.0¸
3.6 μm )», Semiconductors, Vol.34, No 4, 2000,
pp.488-492
B.Matveev, N.Zotova,
S.Karandashov, M.Remennyi, N.Stus', G.Talalakin.,”InAs(Sb)(P) and In(Ga)As(Sb)
LEDs as a light source for high temperature (t= 80¸
180 C ) optical sensing in the mid-IR (3 ¸ 5 m
m) spectral range”, 5th European Conference on Optical Chemical Sensors and
Biosensors (EUROPTRODE V), Lyon, France April 16-19, 2000, Book of Abstracts,
p.193-194.
M. A'daraliev, N.V. Zotova, S.A. Karandashev,
B.A. Matveev, M.A. Remenniy, N.M. Stus', G.N. Talalakin, V.K. Malyutenko and
O.Yu. Malyutenko. ~4 μm Negative Luminescence from
p-InAsSbP/n-InAs Diodes in the Temperature Range of 20-180°C. Abstracts of the
Fifth International Conference “Material Science and Material Properties for
Infrared Optoelectronics”, 22-24 May 2000, Kyiv, Ukraine, p.58
M. A'daraliev, N.V. Zotova, S.A. Karandashev,
B.A. Matveev, M.A. Remenniy, N.M. Stus', G.N. Talalakin “InGaAsSb(Gd)/InAsSbP
Double Heterostructure Lasers (l =3.0-3.3 μm ) for Diode Laser Spectroscopy” Semiconductors
Vol.34 (2000), No 7, pp.848-852
M. Aidaraliev, N.V. Zotova, S.A. Karandashev, B.A. Matveev,
M.A. Remenniy, N.M. Stus', G.N. Talalakin, V.K. Malyutenko and O. Yu. Malyutenko.
“4 μm negative luminescence from p-InAsSbP/n-InAs
diodes in the temperature range of 20–180°C”, SPIE vol.4355, pp.161-167, 2000.
L.A.Kulakova, B.A.Matveev, B.T.Melekh, “Si-Te
acousto-optic modulator for the 1.7-10.6 μm region”,
Journal of Non-Crystalline Solids 266-269 (2000) 969-972
Last century papers:
1979
B.A.Matveev, M.P.Mikhailova, N.N.Smirnova , N.M.Stus`,
G.N.Talalakin, "Avalanche multiplication in p-n junctions in InAsSb
"Sov.Phys.Semicond.v.13(1979),N 3, pp. 294 – 297
1980
N.P.Esina, N.V.Zotova. Mechanisms of recombination of excess
carriers in indium arsenide and its solid solutions.
Sov.Phys.Semicond.14(1980),185-188.
B.A.Matveev, A.A.Rogachev, N.M.Stus', G.N.Talalakin,
"Crystals with a radially symmetric virtual
lattice"Sov.Tech.Phys.Lett.v.6(1980),N 2, pp.89-90.
1981
N.P.Esina, N.V.Zotova, B.A.Matveev, L.D.Neulmina, N.M.Stus,
G.N.Talalakin, "Investigation of optical prorerties of InAsSbP solid solutions"
Sov.Phys.Semicond.15 (1981), N 12, pp.1372-1374.
19 83
N.P.Esina, N.V.Zotova, S.A.Karandashev, G.M.Filaretova,
"Metal-semiconductor structures based on p-type InAs", Sov.Phys.-Semicond.v.17(1983),N
6, pp.624-627.
N.P.Esina, N.V.Zotova, B.A.Matveev, N.M.Stus', G.N.Talalakin,
T.D.Abishev”, Long wavelength uncooled light emitting diodes from InAsSbP solid
solutions”, Sov.Tech.Phys.Lett.9(1983), pp.167-168.
19 84
N.P.Esina, N.V.Zotova, S.A.Karandashev, G.M.Filaretova,
"Tunneling surface recombination in M.S.structures on p-InAs" Sov.Phys.Status
Solidi v.85 (1984), N 2,pp.655-660
N.S.Averkiev , N.V.Zotova, B.A.Matveev, N.M.Stus` and
G.N.Talalakin, "Polarization of the luminescence emitted from epitaxial films of
InAsSbP solid solutions", Sov.Phys.Semicond.v.18(1984),N 10, pp. 1123 - 1125
B.A.Matveev, N.M.Stus', G.N.Talalakin, "Precision optical
method for the oriental cutting of crystals", Sov.J.Opt.Technol.,v.51(1984), n
6,pp. 346-348
A.A.Bakun, B.A.Matveev, I.N.Popov, N.M.Stus', G.N.Talalakin,
"X-ray diffraction by plastically deformed epitaxial heterostructures",
Sov.Technical Physics Lett.,v.10(1984), N 11, pp.548-549
19 85
A.A.Bakun, B.A.Matveev, V.B.Smirnitskii, N.M.Stus',
G.N.Talalakin, "Concave diffraction gratings on surfaces of single crystals",
Sov.Technical Physics Lett.,v.11(1985),N 10, pp.485- 486
Esina N.P. et al J.Appl.Spectrosc.,v.42 (1985),pp. 465-467
1986
S.G.Konnikov, B.A.Matveev, T.B.Popova ,N.M.Stus`,
G.N.Talalakin and V.E.Umanskii, "Distribution of dislocations in bent InAsSbP/InAs
structures", Sov.Phys.Solid State, v.28 (1986), N 3, pp. 439 - 441
N.V.Zotova, S.A.Karandashev, B.A.Matveev, N.M.Stus' and
G.N.Talalakin "Coherent emission at 3.9 mm in InAsSbP p-n structures"
Sov.Tech.Phys.Lett.v. 12(1986), N 12,pp. 599 - 600
B. A. Matveev , Petrov V.I. et al ," Features of growth and
luminescence properties of epitaxial heterojunction structures based on InGaAs
and InAsP (x<0.2), Izv.Akad.Nauk.SSSR, Neorg.Mater, 1986, v. 22, No. 4, pp.
482-486
19 87
N.V.Zotova, S.A.Karandashev, B.A.Matveev, N.M.Stus',
G.N.Talalakin and Yu.Yu.Bilinets, "Parameters of the luminescence emitted by
epitaxial films and p-n structures based on InGaAs ( 0 < x < 0.23)”,
Sov.Phys.Semicond.v.21(1987),N 6, pp. 658 - 661
B.Zh.Kushkimbaeva, B.A.Matveev, N.M.Stus', G.N.Talalakin,
A.S.Filipchenko, E.I.Chaikina, "Photoluminescence of plastically deformed p-type
GaSb", Sov.Phys.-Semicond.v.29(1987),N 10, pp. 1160-1161.
B.A.Matveev, L.G.Novikova, N.M.Stus', G.N.Talalakin,
M.A.Chernov, "Manifestations of edge distortions on X-ray topograms of bent
GaAsSbP/GaAs-structures", Sov.Phys.-Tech.Phys.v.32(1987), N 10, pp.1204-1206.
M.Aidaraliev, N.V.Zotova, S.A.Karandashev, B.A.Matveev,
N.M.Stus', G.N.Talalakin, "Temperature dependence of the characteristics of
stimulated emission in InAsSb p-n structures", Sov.Tech.Phys.Lett. 13(1987), N
3, pp. 134-135
M.Aidaraliev, N.V.Zotova, S.A.Karandashev, B.A.Matveev,
N.M.Stus', G.N.Talalakin, "Coherent injection emission in InAsSbP/InAs/InASSbP
double heterostructure", Sov.Tech.phys.Lett. 13 (1987), N 5,pp. 232-233.
19 88
B.Zh.Kushkimbaeva, B.A Matveev, G.N.Talalakin,
A.S.Filipchenko, E.I.Chaikina, "Redistribution of residual stress during the
profiling of substrates in InGaSbAs/GaSb-structures", Sov.Tech.Phys.Lett.
v.14(1988), N 2, pp.110-111
M.Aidaraliev, N.V.Zotova, S.A.Karandashev, B.A.Matveev,
N.M.Stus', G.N.Talalakin, "Stimulated emission ( 3-3.3 um, 77K) during current
injection in plastically deformed InAsSbP/InAs double heterostructures",
Sov.Tech.Phys.Lett. v. 14(1988), N9, pp.704-706
B.A.Matveev, V.I.Petrov, N.M.Stus`, G.N.Talalakin and
A.V.Shabalin, "Cathodoluminescence of graded-gap epitaxial InAsSbP/InAs
structures", Sov.Phys.Semicond.v.22(1988), N 7, pp. 788 - 790
B.Zh.Kushkimbaeva, B.A.Matveev, N.M.Stus', G.N.Talalakin and
E.I.Chaikina, "Strain profile in graded-index InAsSbP /InAs(x+y<0.3)
structures", Sov.Technical Physics Lett, v.14 ( 1988),N11 , pp.887-888
B.A.Matveev, N.M.Stus',G.N.Talalakin,"Inverse defect
formation during growth of epitaxial InAsSbP/InAs structures",
Sov.Phys.Crystallogr.33(1) Jan.-Feb.1988, pp.124-127
1989
M.Aidaraliev, N.V.Zotova, S.A.Karandashev, B.A.Matveev,
N.M.Stus', G.N.Talalakin, “Spontaneous and stimulated emission from InAsSbP/InAs
heterostructures”, Phys.Stat.Sol.(a)115(1989), K117-120.
M.Aidaraliev, N.V.Zotova, S.A.Karandashev, B.A.Matveev,
N.M.Stus,G.N.Talalakin, “Low threshold lasers for the interval 3-3.5 um based on
InAsSbP/InGaAsSb double heterostructures”, Sov.Tech.Phys.Lett. 15(1989), N 8,
pp. 600-601.
M.Aidaraliev, N.V.Zotova, S.A.Karandashev, and N.M.Stus',
"Temperature Dependence of the Luminescence Emitted by Indium Arsenide and by
InAsSbP and InGaAs Solid Solutions", Sov.Phys.Semicond., vol.23 (1989), N4,
pp.371-373
1990
M.Aidaraliev, T.S.Argunova , N.V.Zotova, S.A.Karandashev,
R.N.Kutt, B.A.Matveev, S.S.Ruvimov, L.M.Sorokin, N.M.Stus,G.N.Talalakin, "LPE
growth and characterization of InAsSbP/InGaAsSb (x <0.2, y<0.2)
heterostructures.for long wavelength (L > 3 um) LEDs and lasers", MRS Symposium
Proceedings,vol.216, Long - wavelength Semiconductor Devices, Materials and
Processes,1990
N.V.Zotova, A.V.Losev, B.A.Matveev, N.M.Stus`, G.N.Talalakin,
A.S.Filipchenko, "Absorption edge of variable-gap InAsSb ( x < 0.54) epitaxial
layers", Sov.Technical Physics Lett.,v.16(1990), N 2, pp.155 - 157
B.Zh.Kushkimbaeva, B.A.Matveev, N.M.Stus', G.N.Talalakin,
A.S.Filipchenko, E.I.Chaikina, "Residual deformation in epitaxial lasers of
InGaAsSbP and InAsSb and InAs-substrate", Sov.Phys.-Crystallogr. v.35(1990), N
5, pp.772-773.
B.A.Matveev, N.M.Stus', G.N.Talalakin, T.V.Cherneva and
Yu.A.Fadin, Izv.Akad.Nauk SSSR, Neorg.Mater, 26, 639 (1990)
T.S.Argunova, R.N.Kyutt, B.A.Matveev, S.S.Ruvimov, N.M.Stus',
G.N.Talalakin, "Structural quality of InAs1-x-ySbxPy-InAs double
heterostructures", Sov.Phys.-Solid.State v.32(1990),N 11,pp.1940-1944.
19 91
N.S.Averkiev , B.Zh.Kushkimbaeva, B.A.Matveev, N.M.Stus',
G.N.Talalakin and E.I.Chaikina, "Polarization of the luminescence emitted from
the surface of III-V heterostructure with a profiled substrate",
Sov.Phys.Semicond.v.25(1991), N 7, pp.6 - 9
N.V.Zotova, S.A.Karandashev, B.A.Matveev, A.V.Pentsov,
S.V.Slobodchikov, N.N.Smirnova, N.M.Stus', G.N.Talalakin, I.I.Markov
"Optoelectronic sensors based on narrow band A3B5 alloys" SPIE Vol.1587
Chemical, Biochemical, and Environmental Fiber Sensors III (1991), pp.334 - 345
.
M.Aidaraliev, N.V.Zotova, S.A.Karandashev, B.A.Matveev,
N.M.Stus',G.N.Talalakin ,"InAsSbP light emitting diodes for analysis of carbon
oxides", Sov.Technical Physics Lett, v.17(1991),n 12, pp.852-853
T.S.Argunova,R.N.Kyutt,B.A.Matveev,S.S.Ruvimov,N.M.Stus',G.N.Talalakin,
"Distribution of defects in InAsSbP-InAs DHs Solid State Phenomena Vol. 19 *20
(1991) pp. 581 -586
19 92
M.Sh.Aidaraliev, G.G.Zegrya, N.V.Zotova, S.A.Karandashev,
B.A.Matveev, N.M.Stus, G.N.Talalakin "Nature of the temperature dependence of
the threshold current density of long-wavelength InAsSbP/InAs and InAsSbP/InAsSb
double-heterostructure lasers", Fizika I Tehcnika Polurpovodnikov 1992, n2, 246
–254 (translation in Semiconductors)
19 93
E.I.Chaikina ,N.V.Zotova, S.A.Karandashev,I.I.Markov ,B.A.Matveev,
N.M.Stus', G.N.Talalakin, M.V.Boikov,M.V.Hivrin, "Nondispersive Analyzers Based
on MID IR LEDs for Fiber Optic Coal Mine Net",Conference Proceedings of the
Third International Soviet Fiber Optics Conference(ISFOC-93),April 26-30,1993,
St.Petersburg, Russia. Edited by Galkin & Polishuk, Published by Information
Gatekeepers Inc.,pp.306-310.
M.Aidaraliev, N.V.Zotova, S.A.Karandashev, B.A.Matveev,
N.M.Stus' and G.N.Talalakin, "Long-wavelength low- threshold lasers based on
III-V compounds", Sov.Phys.Semicond.v.27 (1993),N 1, pp. 10-15
M.Aidaraliev, N.V.Zotova, S.A.Karandashev, B.A.Matveev,
N.M.Stus' and G.N.Talalakin, "Low-threshold long-wave lasers (L=3.0-3.6 um)
based on III-V alloys", Semicond.Sci.Technol.v 8(1993),N 8,pp.1575-1580
J. Malinen , T. Hannula , N. V. Zotova, S. A. Karandashov, I.
I. Markov, B. A. Matveev, N. M. Stus', G. N. Talalakin "Nondispersive and
multichannel analyzers based on mid-IR LEDs and arrays", SPIE vol.2069, Optical
Methods for Chemical Process Control, Boston 7-10 September,1993, pp.95-101
19 94
M.Aidaraliev, N.V.Zotova, S.A.Karandashev, B.A.Matveev,
N.M.Stus' and G.N.Talalakin, "LED based sensor for CO2 detection at 4.3
um"Proceedings of the 2 -nd European Conference on Optical Chemical Sensors and
Biosensors, Firenze, Italy-April 19-21, 1994, p.127
M.Aidaraliev, N.V. Zotova, S.A. Karandashov, B.A. Matveev,
N.M. Stus', G.N. Talalakin."Midwave (3-4 um) InAsSbP/InGaAsSb Infrared Diode
Lasers as a Source for Gas Sensors" Abstracts of the 4th International Symposium
on Monitoring of Gaseous Pollutants by Tunable Diode Lasers, 19th -20th October
,1994,Freiburg, Germany
T.S.Argunova, R.N.Kyutt, B.A.Matveev, S.S.Ruvimov, N.M.Stus',
G.N.Talalakin, “Strain distribution in the binary heterostructures InAsSbP/InGaAsSb”,
Phys.Sol.State, 36 (1994), n 10, pp.1633-1636
19 95
M.Aydaraliev, M.S.Bresler, O.B.Gusev, S.A. Karandashov, B.A.
Matveev, N.M. Stus',G.N. Talalakin and N.V. Zotova, "Radiation recombination in
InAsSb/InAsSbP double heterostructures", Semicond.Sci.Technol.v 10 (1995), N 1,
pp.151-156
B.A. Matveev, M.Aidaraliev, N.V. Zotova, S.A. Karandashov,
N.M. Stus' and G.N.Talalakin, "Midwave (3-5 mm) III-V infrared LEDs and diode
lasers as a source for gas sensors ", Air Pollution and Visibility Measurements,
editors: P.Fabian, V.Klein, M.Tacke, K.Weber and C.Verner, Proc.SPIE 2506,
pp.796-802, 1995.
19 96
M.Aidaraliev, N.V. Zotova, S.A. Karandashov, B.A.Matveev,
N.M. Stus', and G.N.Talalakin, "Midwave (3-4 um) InAsSbP/InGaAsSb infrared diode
lasers as a source for gas sensors ", Infrared Physics & Technology, 37(1996)
83-86
B.A.Matveev, G.A.Gavrilov, V.V.Evstropov, N.V.Zotova,
S.A.Karandashov, G.Yu.Sotnikova, N.M.Stus', G.N.Talalakin and J.Malinen, "Midwave
(3-4 um) Infrared LEDs as a Source for Gas and Liquid Sensors", Abstracts of the
3rd European Conference on Optical Chemical Sensors and Biosensors, p.170, March
31-April 3, 1996, Zurich, Switzerland, Submitted to Sensors and Actuators, 1996
N.V. Zotova, S.A. Karandashov, B.A. Matveev, N.M. Stus', G.N.
Talalakin and M.A.Remennyi" Tunable mid-IR Diode Lasers based on InGaAsSb/InAsSbP
DH", Spectrochimica Acta Part A 52(1996), 857-862
L.A.Kulakova, N.V. Zotova, S.A. Karandashov, B.A. Matveev,
B.T.Melekh, N.M. Stus' and G.N. Talalakin , "Acoustooptic Modulator For Fibre
Optic Gas Sensor Based on Midwave InGaAsSb/InAsSbP Diode Laser", CLEO/Europe'96,
Technical Digest, Abstract CWL4
B.A. Matveev, G.A. Gavrilov, N.V. Zotova, S.A. Karandashov,
G.Yu. Sotnikova, N.M. Stus', G.N. Talalakin ,"LED Based Sensors For mid-IR Gas
Analyzers ", Mid-infrared Optoelectronics.Materials and Devices , International
Conference, 17th & 18th September 1996, Lancaster University, UK
N.V. Zotova, S.A. Karandashov, B.A. Matveev, N.M. Stus',
V.V.Shustov and G.N. Talalakin ,"InGaAsSb/InAs Epitaxial Heterostructures for
Mid-IR LEDs", Mid-infrared Optoelectronics.Materials and Devices, International
Conference, 17th & 18th September 1996, Lancaster University, UK
B.A. Matveev, N.V. Zotova, S.A. Karandashov, L.A.Kulakova,
B.T.Melekh, N.M. Stus' and G.N. Talalakin, " Si-Te Acoustooptic Modulator For
Fibre Optic Gas Sensor Based on Midwave InGaAsSb/InAsSbP Diode Laser",
Mid-infrared Optoelectronics.Materials and Devices ,International Conference,
17th & 18th September 1996, Lancaster University, UK
N.V. Zotova, S.A. Karandashov, T.S. Lagunova, B.A. Matveev,
N.M. Stus', and G.N. Talalakin, "Rare-earth Doping of epitaxial InAs and InAs
Based Alloy Layers", Mid-infrared Optoelectronics. Materials and Devices,
International Conference, 17th &18th September 1996, Lancaster University, UK
N.V. Zotova, S.A. Karandashov, B.A. Matveev, N.M. Stus', and
G.N. Talalakin, "Rare-earth Doping of epitaxial InAs and InAs Based Alloy
Layers", "Material Science and Material Properties for Infrared Optoelectronics"
,International Conference, 30 September- 02 October, 1996 ,Uzhgorod, UKRAINE
L.A.Kulakova, N.V. Zotova, S.A. Karandashov, B.A. Matveev,
B.T.Melekh, N.M. Stus' and G.N. Talalakin , "Si-Te Acoustooptic Modulator For
Fibre Optic Gas Sensor Based on Midwave InGaAsSb/InAsSbP Diode Laser", SPIE
vol.3182( 1996), Material Science and Material Properties for Infrared
Optoelectronics" ,International Conference, 30 September- 02 October, 1996 ,Uzhgorod,
UKRAINE, pp.73-77
M.Aydaraliev, M.S.Bresler, O.B.Gusev, N.V.Zotova, S.A.
Karandashov, B.A. Matveev,N.M. Stus',G.N. Talalakin, "InAsSbP-InAs-InAsSbP laser
double-heterostructures with a p-n junction in the active region",
Semiconductors 30( 8 ), August 1996, pp. 711-715
M.S.Bresler, O.B.Gusev, N.V.Zotova, M.Aydaraliev, S.A.
Karandashov, B.A. Matveev, N.M. Stus',G.N., Talalakin ,"InAs-based laser double-
heterostructures with a p-n junction in the active region", Optical Materials
6(1996) 111-116
19 97
B.A. Matveev, N.V. Zotova, S.A. Karandashov, T.S. Lagunova,
N.M. Stus', and G.N. Talalakin ,"Rare-earth doped InGaAsSb/InAsSbP DH lasers for
the 3.2-3.5 um range", Proceedings of the OPTICS DAY`97, Finnish Optical Sosiety,
Tampere University of Technology, 21 February 1997, p.22
Boris Matveev, Gennadii Gavrilov, Nonna Zotova, Sergey
Karandashov, Galina Sotnikova, Nikolai Stus', Georgii Talalakin and Jouko
Malinen, "Optical sensors utilizing room temperature A3B5 LEDs", Proceedings of
the OPTICS DAY`97, Finnish Optical Sosiety, Tampere University of Technology, 21
February 1997, p.21
N.V. Zotova, S.A. Karandashov, B.A. Matveev, M.A. Remennyi,
N.M. Stus', and G.N. Talalakin ,"Mesa stripe for the 3-3.6 m
m range lasers utilizing gadolinium-doped InAsSbP/InGaAsSb double
heterostructures" Tech.Phys.Lett. 23(1), January 1997, pp.41-42
B.A. Matveev, G.A. Gavrilov, V.V. Evstropov, N.V.Zotova, S.A.
Karandashov, G.Yu. Sotnikova, N.M. Stus', G.N. Talalakin and J. Malinen,
"Mid-infrared (3-5 m m ) LEDs as sources for gas and
liquid sensors", Sensors and Actuators B 38-39 (1997) 339-343
19 98
M.Remennyi, N.Zotova, S.Karandashov, N.Il'inskaya, B.Matveev,
N.M.Stus', G.N.Talalakin ,"Mesa-stripe lasers based on InGaAsSb(Gd)/InAsSbP for
the 3-3.6 m m spectroscopy", Proceedings of the 5th
International Symposium on Gas Analysis by Tunable Diode Lasers, Freiburg, 25-26
February, 1998, (VDI Berichte 1366) pp.223-226
B.A.Matveev, N.Zotova, S.Karandashov, M.Remennyi,
N.Il'inskaya, N.M.Stus', G.N.Talalakin and J.Malinen” InAsSbP/InAs LEDs for the
3.3-5.3 m m Spectral Range” Mid-infrared
Optoelectronics. Materials and Devices. Second International Conference. Prague,
March 26-27, 1998. Abstracts, p.23
B.A.Matveev, M.Remennyi, N.Zotova, S.Karandashov, N.M.Stus',
G.N.Talalakin, A.Lambrecht and T.Beyer Temperature and Current Tuning of Mid-IR
InGaAsSb Diode Lasers Mid-infrared Optoelectronics. Materials and Devices.
Second International Conference. Prague, March 26-27, 1998. Abstracts, p.46
M.Aidaraliev, N.V.Zotova, S.A.Karandashov, B.A. Matveev,
M.A.Remennyi, N.M.Stus', and G.N.Talalakin, "Long-wavelength uncolled sources of
L=5-6 m m radiation using graded-index InAsSb(P)
layers grown by liquid phase epitaxy" Tech.Phys. Lett.,24( 1998), No 3,
pp.243-245
N.V. Zotova, S.A. Karandashov, B.A. Matveev, N.M.Stus',
M.A.Remennyi, and G.N. Talalakin ,"LED based sensors for CnHm, CO2 and CO
detection in the mid-IR region" International Conference on Ecology of Cities,
8-12 June 1998, Rhodes, Greece, 136-142
B.A. Matveev, N.V. Zotova, S.A. Karandashov, M.A. Remennyi,
N.D. Il'inskaya N.M .Stus',G.N. Talalakin and J. Piotrovski"Narrow line InAsSbP/InAs
LEDs and detectors for the 5-6 m m spectral range"
Int.Conf. Physics at the Turn of the 21st Century, September 28-October 2, 1998,
St.Petersburg, Summaries, p.97
M.Aidaraliev, N.V. Zotova, S.A. Karandashov, B.A. Matveev,
M.A. Remennyi, N.M. Stus' and G.N. Talalakin,, ”Emissive charateristics of
mesa-stripe lasers (l=3.0-3.6 m m ) made from
InGaAsSb/InAsSbP double heterostructures", Technical Physics Letters, vol.24(
1998), no 6, pp.472-474
B.Matveev, N.Zotova, S.Karandashov, M.Remennyi, N.Il'inskaya,
N.Stus', V.Shustov, G.Talalakin and J.Malinen "InAsSbP/InAs LEDs for the 3.3-5.5 m m spectral range" IEE Proceedings, Optoelectronics
(Special issue on MID-INFRARED OPTOLECTRONICS: MATERIALS AND DEVICES) Vol 145
(5) , pp. 254-256 (1998)
B.Matveev, M.Aidaraliev, G.Gavrilov, N.Zotova, S.Karandashov,
G.Sotnikova, N.Stus', G.Talalakin, N.Il'inskaya, S.Aleksandrov ”Room temperature
InAs photodiode-InGaAs LED pairs for methane detection in the mid-IR” Sensors
& Actuators Vol. 51(1998), Nos. 1-3, pp. 233-237
1999
M.Aidaraliev, N.V. Zotova, S.A. Karandashov, B.A. Matveev,
M.A. Remennyi, N.M. Stus' and G.N. Talalakin, “Mechanisms of radiative
recombination in InGaAsSb/InAsSbP lasers operating in the 3.0 to 3.6
um spectral range” Semiconductors, vol 33(1999), No
2, pp.200-205
M.Aidaraliev, N.V. Zotova, S.A. Karandashov, B.A. Matveev,
M.A. Remennyi, N.M. Stus' and G.N. Talalakin “Gain and internal losses in
InGaAsSb/InAsSbP double-heterosstructure lasers”, Semiconductors, vol 33(1999),
No 6, pp.700-703
N.V..Zotova, S.A. Karandashov, B.A. Matveev, M.A. Remennyi,
N.M. Stus' and G.N. Talalakin, “Gadolinium -doped InGaAsSb solid solusions on an
InAs substrate for light-emitting diodes operating in the spectral interval
l =3-5 m m”,
Semiconductors, vol.33 (1999), No 8, pp. 920-923
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