Powerful diode lasers are realized on the base of
InGaAsSb/InAsSbP DH as in the case of single mode lasers. Original technology including
growth DH on (111) oriented substrate and Gd-doped active area leads to internal quantum
efficiency up to 70 % from broad contact lasers with stripe width w=200 µm and cavity
length L=600-700 µm.
Lasers exhibit threshold currents Ith=150-200
mA (77 K), pulsed power up to 0.8 W/facet (I=10 A) and cw power of 160 mW (1 A) at 77 K.
Radiation spectra are single mode near the threshold and multimode with halfwidth about Dl =0.02 mm at I> Ith
+(20-50 mA). Far-field pattern is characterized by FWHM about 400 in both
planes. Operation voltage reaches 3 V at 10 A.
